Investigation of the Effects of Very Low Pressure Chemical Vapor Deposited TiSi2 on Device Electrical Characteristics

V. Ilderem; R. Reif

doi:10.1149/1.2096389

Investigation of the Effects of Very Low Pressure Chemical Vapor Deposited TiSi2 on Device Electrical Characteristics

Journal of The Electrochemical Society ◽

10.1149/1.2096389 ◽

1989 ◽

Vol 136 (10) ◽

pp. 2989-2993 ◽

Cited By ~ 8

Author(s):

V. Ilderem ◽

R. Reif

Keyword(s):

Chemical Vapor ◽

Low Pressure ◽

Electrical Characteristics ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Improvement in Electrical Characteristics of Low-Pressure Chemical-Vapor-Deposited SiNxDielectric Layer on GaN Substrate by Ammonium Sulfide Treatment

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.120202 ◽

2009 ◽

Vol 48 (12) ◽

pp. 120202 ◽

Cited By ~ 1

Author(s):

Ming-Kwei Lee ◽

Chen-Lin Ho ◽

Cheng-Yuan Lee

Keyword(s):

Chemical Vapor ◽

Low Pressure ◽

Electrical Characteristics ◽

Ammonium Sulfide ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Electrical characteristics of MOSFETs using low-pressure chemical-vapor-deposited oxide

IEEE Electron Device Letters ◽

10.1109/55.732 ◽

1988 ◽

Vol 9 (7) ◽

pp. 324-327 ◽

Cited By ~ 20

Author(s):

J. Lee ◽

C. Hegarty ◽

C. Hu

Keyword(s):

Chemical Vapor ◽

Low Pressure ◽

Electrical Characteristics ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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ChemInform Abstract: Investigation of the Effects of Very Low Pressure Chemical Vapor Deposited TiSi2 on Device Electrical Characteristics.

ChemInform ◽

10.1002/chin.199003313 ◽

1990 ◽

Vol 21 (3) ◽

Author(s):

V. ILDEREM ◽

R. REIF

Keyword(s):

Chemical Vapor ◽

Low Pressure ◽

Electrical Characteristics ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Suppression and characterization of interface states at low-pressure-chemical-vapor-deposited SiN /III-nitride heterostructures

Applied Surface Science ◽

10.1016/j.apsusc.2020.148530 ◽

2021 ◽

Vol 542 ◽

pp. 148530

Author(s):

Kexin Deng ◽

Xinhua Wang ◽

Sen Huang ◽

Haibo Yin ◽

Jie Fan ◽

...

Keyword(s):

Chemical Vapor ◽

Low Pressure ◽

Interface States ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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ChemInform Abstract: Rapid Thermal Annealed Low Pressure Chemical-Vapor-Deposited SiO2 as Gate Dielectric in Silicon MOSFET′s.

ChemInform ◽

10.1002/chin.198736362 ◽

1987 ◽

Vol 18 (36) ◽

Author(s):

S. ANG ◽

S. WILSON

Keyword(s):

Gate Dielectric ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Analysis of low‐pressure chemical vapor deposited silicon nitride by Rutherford backscattering spectrometry

Applied Physics Letters ◽

10.1063/1.93714 ◽

1982 ◽

Vol 41 (9) ◽

pp. 844-846 ◽

Cited By ~ 7

Author(s):

H. L. Hwang ◽

C. C. Hwu ◽

J. C. Liue ◽

H. H. Lin

Keyword(s):

Silicon Nitride ◽

Rutherford Backscattering Spectrometry ◽

Chemical Vapor ◽

Low Pressure ◽

Rutherford Backscattering ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Low Pressure Chemical Vapor Deposited Tungsten Silicide For GaAs ICs

10.1117/12.941044 ◽

1987 ◽

Author(s):

Min-Shyong Lin ◽

Hen-Chang Chou

Keyword(s):

Chemical Vapor ◽

Low Pressure ◽

Tungsten Silicide ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Annealing and oxidation behavior of low‐pressure chemical vapor deposited tungsten slicide layers on polycrystalline silicon gates

Journal of Applied Physics ◽

10.1063/1.339414 ◽

1987 ◽

Vol 62 (7) ◽

pp. 2830-2835 ◽

Cited By ~ 10

Author(s):

D. K. Sadana ◽

A. E. Morgan ◽

M. H. Norcott ◽

S. Naik

Keyword(s):

Polycrystalline Silicon ◽

Oxidation Behavior ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Properties of low‐pressure chemical vapor deposited dielectric films from hexamethyldisilazane

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.576300 ◽

1989 ◽

Vol 7 (3) ◽

pp. 1446-1450 ◽

Cited By ~ 7

Author(s):

Dean Freeman ◽

Werner Kern

Keyword(s):

Chemical Vapor ◽

Low Pressure ◽

Dielectric Films ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Thermal annealing effect on ultraviolet-light-induced leakage current in low-pressure chemical vapor deposited silicon nitride films

Thin Solid Films ◽

10.1016/j.tsf.2013.10.163 ◽

2014 ◽

Vol 550 ◽

pp. 545-553 ◽

Cited By ~ 7

Author(s):

Kiyoteru Kobayashi ◽

Aran Suzuki ◽

Kokichi Ishikawa

Keyword(s):

Silicon Nitride ◽

Leakage Current ◽

Thermal Annealing ◽

Ultraviolet Light ◽

Chemical Vapor ◽

Low Pressure ◽

Annealing Effect ◽

Silicon Nitride Films ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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