AC Thin Film Electroluminescent Devices with Rare Earth Doped ZnS

1991 ◽  
Vol 138 (5) ◽  
pp. 1512-1516 ◽  
Author(s):  
M. K. Jayaraj ◽  
C. P. G. Vallabhan
Keyword(s):  
Thin Film ◽  
Rare Earth ◽  
Electroluminescent Devices ◽  
Rare Earth Doped

Band-Gap Energy Dependence of Emission Spectra in Rare Earth-Doped Zn(1-x)CdxS Thin Film Electroluminescent Devices

1992 ◽  
Vol 31 (Part 1, No. 2A) ◽  
pp. 295-300 ◽  
Author(s):  
Noboru Miura ◽  
Takashi Sasaki ◽  
Hironaga Matsumoto ◽  
Ryotaro Nakano
Keyword(s):  
Thin Film ◽  
Rare Earth ◽  
Band Gap ◽  
Energy Dependence ◽  
Emission Spectra ◽  
Band Gap Energy ◽  
Electroluminescent Devices ◽  
Gap Energy ◽  
Rare Earth Doped

scholarly journals Schottky barrier formation at the Au to rare earth doped GaN thin film interface

2011 ◽  
Vol 55 (3) ◽  
pp. 31301 ◽  
Author(s):  
S.R. McHale ◽  
J.W. McClory ◽  
J.C. Petrosky ◽  
J. Wu ◽  
A. Rivera ◽  
...  
Keyword(s):  
Thin Film ◽  
Rare Earth ◽  
Schottky Barrier ◽  
Barrier Formation ◽  
Rare Earth Doped ◽  
Film Interface

Properties of rare earth doped thin film dielectric layers for upconversion laser waveguides

2011 ◽  
Author(s):  
S. J. Pearce ◽  
M. D. B. Charlton ◽  
G. J. Parker ◽  
J. S. Wilkinson
Keyword(s):  
Thin Film ◽  
Rare Earth ◽  
Dielectric Layers ◽  
Film Dielectric ◽  
Rare Earth Doped

Rare-earth-doped transparent yttrium silicate thin film phosphors for colour displays

1995 ◽  
Vol 254 (1-2) ◽  
pp. 268-272 ◽  
Author(s):  
X. Ouyang ◽  
A.H. Kitai ◽  
R. Siegele
Keyword(s):  
Thin Film ◽  
Rare Earth ◽  
Yttrium Silicate ◽  
Rare Earth Doped

Rare-earth doped Si nanostructures for Microphotonics

2004 ◽  
Vol 817 ◽  
Author(s):  
D. Pacifici ◽  
G. Franzò ◽  
F. Iacona ◽  
A. Irrera ◽  
S. Boninelli ◽  
...  
Keyword(s):  
Rare Earth ◽  
Light Emission ◽  
Rare Earth Ions ◽  
Energy Level Scheme ◽  
Electroluminescent Devices ◽  
A Value ◽  
Si Nanocrystals ◽  
Emission Yield ◽  
Si Nanostructures ◽  
Rare Earth Doped

AbstractIn the present paper, we will review our work on rare-earth doped Si nanoclusters. The samples have been obtained by implanting the rare-earth (e.g. Er) in a film containing preformed Si nanocrystals. After the implant, samples have been treated at 900°C for 1h. This annealing temperature is not enough to re-crystallize all of the amorphized Si clusters. However, even if the Si nanoclusters are in the amorphous phase, they can still efficiently transfer the energy to nearby rare-earth ions. We developed a model for the Si nanoclusters-Er system, based on an energy level scheme taking into account the coupling between each Si nanocluster and the neighboring Er ions. By fitting the data, we were able to determine a value of 3×10−15 cm3 s−1 for the Si nanocluster-Er coupling coefficient. Moreover, a strong cooperative up-conversion mechanism between two excited Er ions and characterized by a coefficient of 7×10−17 cm3 s−1, is shown to be active in the system, demonstrating that more than one Er ion can be excited by the same nanocluster. We show that the overall light emission yield of the Er related luminescence can be enhanced by using higher concentrations of very small nanoaggregates. Eventually, electroluminescent devices based on rare-earth doped Si nanoclusters will be demonstrated.

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