Fabrication of Submicron Gratings for 1.5 μm InGaAsP / InP Distributed Feedback Lasers by Reactive Ion Etching Using  C 2 H 6 /  H 2

1992 ◽  
Vol 139 (10) ◽  
pp. 2969-2974 ◽  
Author(s):  
Hiroshi Sugimoto ◽  
Yuji Abe ◽  
Toshiyuki Ohishi ◽  
Ken‐ichi Ohtsuka ◽  
Teruhito Matsui ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Distributed Feedback ◽  
Distributed Feedback Lasers ◽  
Ion Etching ◽  
Submicron Gratings

Low Threshold GaInAsP/InP Distributed Feedback Lasers with Periodic Wire Active Regions Fabricated by CH 4/H 2 Reactive Ion Etching

1999 ◽  
Vol 38 (Part 2, No. 11B) ◽  
pp. L1323-L1326 ◽  
Author(s):  
Nobuhiro Nunoya ◽  
Madoka Nakamura ◽  
Hideo Yasumoto ◽  
Shigeo Tamura ◽  
Shigehisa Arai
Keyword(s):  
Reactive Ion Etching ◽  
Active Regions ◽  
Distributed Feedback ◽  
Distributed Feedback Lasers ◽  
Ion Etching ◽  
Low Threshold

Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

1996 ◽  
Author(s):  
George F. McLane ◽  
Paul Cooke ◽  
Robert P. Moerkirk
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching

2020 ◽  
Vol 54 (6) ◽  
pp. 672-676
Author(s):  
L. K. Markov ◽  
I. P. Smirnova ◽  
M. V. Kukushkin ◽  
A. S. Pavluchenko
Keyword(s):  
Reactive Ion Etching ◽  
Surface Profile ◽  
Mixture Composition ◽  
Gas Mixture ◽  
Ion Etching

Reactive ion etching of III-V compounds using C2H6/H2

1988 ◽  
Vol 24 (13) ◽  
pp. 798 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
T. Ohishi ◽  
H. Ogata
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

GaInAsP/InP mass transport laser monolithically integrated with photodetector using reactive ion etching

1989 ◽  
Vol 25 (15) ◽  
pp. 954 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
K. Ohtsuka ◽  
Y. Abe ◽  
H. Ogata
Keyword(s):  
Mass Transport ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Monolithically Integrated
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