Directed Vapor Deposition of Amorphous and Polycrystalline Electronic Materials: Nonhydrogenated a‐Si

1995 ◽  
Vol 142 (10) ◽  
pp. L173-L175 ◽  
Author(s):  
J. F. Groves ◽  
S. H. Jones ◽  
T. Globus ◽  
L. M. Hsiung ◽  
H. Wadley
Keyword(s):  
Vapor Deposition ◽  
Electronic Materials ◽  
Directed Vapor Deposition

ChemInform Abstract: Directed Vapor Deposition of Amorphous and Polycrystalline Electronic Materials: Nonhydrogenated A-Si.

ChemInform ◽  
2010 ◽  
Vol 27 (4) ◽  
pp. no-no
Author(s):  
J. F. GROVES ◽  
S. H. JONES ◽  
T. GLOBUS ◽  
L. M. HSIUNG ◽  
H. WADLEY
Keyword(s):  
Vapor Deposition ◽  
Electronic Materials ◽  
Directed Vapor Deposition

Directed Vapor Deposition: Low Vacuum Materials Processing Technology

2000 ◽  
Author(s):  
J. F. Groves ◽  
G. Mattausch ◽  
H. Morgner ◽  
D. D. Hass ◽  
H. N. Wadley
Keyword(s):  
Vapor Deposition ◽  
Processing Technology ◽  
Materials Processing ◽  
Directed Vapor Deposition

Electron Beam - Directed Vapor Deposition of Multifunctional Structures

2001 ◽  
Vol 672 ◽  
Author(s):  
D. T. Queheillalt ◽  
Y. Katsumi ◽  
H. N. G. Wadley
Keyword(s):  
Electron Beam ◽  
Thermal Management ◽  
Metal Hydride ◽  
Vapor Deposition ◽  
Porous Electrode ◽  
Cellular Structures ◽  
Nickel Metal ◽  
Nickel Metal Hydride ◽  
Load Bearing ◽  
Directed Vapor Deposition

ABSTRACTMultifunctional structures are those that combine load bearing support in addition to supplemental functions such as actuation, electrochemical energy storage or thermal management. Electron beam - directed vapor deposition (EB- DVD) technology has been used for the deposition of templated cellular structures for micro heat-pipe structures and porous electrode coatings for rechargeable nickel - metal hydride cells. In addition to load bearing support, the tem- plated cellular structures exhibit enhanced thermal management characteristics and the electrochemical cells can be integrated into the load bearing supports of linear and truss based structures leading to their multifunctionality. Dur- ing EB-DVD, the electron beam evaporated vapor flux is encompassed by a rarefied transonic inert gas jet, entraining the vapor in a non-reactive gas flow and transporting it onto a polymer or metal template structure. Here, EB-DVD technology has been used to synthesize copper based templated cellular structures for thermal management systems and porous nickel coatings for the positive electrode of rechargeable nickel - metal hydride cells.

An Investigation into the Role of Incorporated Solvent (EtOH/H2O) Molecules on the Structure of Group 2 Metal bis(β- Diketonate) Complexes: Ramifications for CVD Precursors of Electronic Materials.

1995 ◽  
Vol 415 ◽  
Author(s):  
David J. Otway ◽  
Henry A. Luten ◽  
K. M. Abdul Malik ◽  
Michael B. Hursthouse ◽  
William S. Rees
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electronic Materials ◽  
Chemical Vapor ◽  
Lewis Base ◽  
Synthesis And Characterization ◽  
Superconducting Metal ◽  
Group 2

ABSTRACTThe synthesis and characterization of thermally stable, volatile, group 2 element-containing complexes is an important prerequisite for the subsequent use of these compounds in chemical vapor deposition (CVD) of superconducting metal oxides (SMO) and other electronic materials, e.g., YBa2Cu3O7-δ. and CaGa2S4:Ce. The utilization of group 2 metal ethoxide compounds {[M(OEt)2(EtOH)4]n (where M = Ca, Sr or Ba)) as precursors to additional complexes is discussed. For example, the compounds [M(tmhd)(OEt)(EtOH)]n (Htmhd = 2,2,6,6- tetramethylheptane-3,5-dione) may be obtained by reacting one equivalent of Htmhd with the metal bis(ethoxide), and these also may be reacted further with functionalized alcohols, or a second β–diketone, to form heteroleptic compounds. Additionally, the preparation and characterization of some Lewis base adducted complexes have been examined with an emphasis on the role that water plays in their isolation.

Monte Carlo Modeling of Atom Transport During Directed Vapor Deposition

1996 ◽  
Vol 441 ◽  
Author(s):  
J. F. Groves ◽  
H. N. G. Wadley
Keyword(s):  
Monte Carlo ◽  
Vapor Deposition ◽  
Velocity Vector ◽  
Vapor Transport ◽  
Atomic Vapor ◽  
Collision Model ◽  
Carrier Gas ◽  
Vapor Atom ◽  
The Impact ◽  
Directed Vapor Deposition

AbstractAtomic vapor transport has been investigated in the low vacuum (5 – 100 Pa) supersonic gas jets encountered in directed vapor deposition processes using a combination of Direct Simulation Monte Carlo (DSMC) techniques and a bimolecular collision model. The DSMC code generates the velocity vector, pressure, and temperature field for the carrier gas flow. This data is used as an input to a bimolecular collision model of atomic vapor transport in the flow. In the collision model, calculation of directed momentum loss cross-sections allows the location of carrier gas/vapor atom collisions to be deduced, and the vapor atom velocity vectors for individual vapor atoms to be tracked from source to substrate. For atoms arriving at the substrate, the impact location and velocity vector are obtained, making possible calculation of deposition efficiency, film thickness, adatom energy, and impact angle. These are the key inputs for simulations of resulting film microstructure/morphology evolution. Preliminary results for atomic transport of Cu vapor in supersonic He flows compare favorably with previously reported experimental observations.

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