Electron Spin Resonance Spectra of Silicon Dangling Bonds with Oxygen Back Bonds in Plasma‐Deposited Amorphous SiO x

1995 ◽  
Vol 142 (7) ◽  
pp. 2346-2351 ◽  
Author(s):  
T. Inokuma ◽  
L. He ◽  
Y. Kurata ◽  
S. Hasegawa
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Dangling Bonds ◽  
Spin Resonance

scholarly journals Electron-spin-resonance center of dangling bonds in undopeda−Si:H

1999 ◽  
Vol 59 (7) ◽  
pp. 4849-4857 ◽  
Author(s):  
T. Umeda ◽  
S. Yamasaki ◽  
J. Isoya ◽  
K. Tanaka
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Dangling Bonds ◽  
Spin Resonance

Photoluminescence and ESR study of Si1−xGex alloy nanocrystals

2000 ◽  
Vol 638 ◽  
Author(s):  
K. Toshikiyo ◽  
M. Tokunaga ◽  
S. Takeoka ◽  
M. Fujii ◽  
S. Hayashi
Keyword(s):  
Thin Films ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Radiative Recombination ◽  
Dangling Bond ◽  
Dangling Bonds ◽  
Alloy Nanocrystals ◽  
Esr Spectrum ◽  
Spin Resonance ◽  
Recombination Centers

AbstractDangling bond defects in Si1−xGex alloy nanocrystals (nc-Si1−xGex) as small as 4 nm in diameter embedded in SiO2 thin films were studied by electron spin resonance (ESR), and the effects of the defects on photoluminescence (PL) properties were discussed. It was found that the ESR spectrum is a superposition of signals from Si and Ge dangling bonds at the interfaces between nc-Si1−xGex and SiO2 matrices (Si and Ge Pb centers). As Ge concentration increased, the intensity of the signal from the Ge Pb centers increased, while that from the Si Pb centers was almost independent of Ge concentration. The increase in the number of Ge Pb centers was accompanied by strong quenching of the PL. The observed correlation between the two measurements suggests that Ge Pb centers act as efficient non-radiative recombination centers for photogenerated carriers, resulting in the quenching of the PL.

Interaction of Oxygen with Nanophase Carbons Investigated by Electron Spin Resonance Spectroscopy

1999 ◽  
Vol 593 ◽  
Author(s):  
A. Manivannan ◽  
A. Punnoose ◽  
M.S. Seehra
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Activated Carbons ◽  
Resonance Spectroscopy ◽  
Direct Relation ◽  
Dangling Bonds ◽  
Spin Concentration ◽  
Surface Areas ◽  
Partial Pressures ◽  
Spin Resonance

ABSTRACTInteraction of oxygen with three commercial activated carbons (GX203, P1400 and MEED50 supplied by PICA USA Inc., with BET surface areas of 1000, 1150 and 2000 m2/g respectively) is investigated using 9 GHz electron spin resonance (ESR) spectroscopy. All three carbons give a single ESR line with g = 2.0028(3), but the linewidth ΔH and the spin concentration Ns, are strongly affected by exposure to oxygen. The ESR parameters (g, ΔH, Ns) are measured for different partial pressures of oxygen. For the highly evacuated samples, δH ≃ 1.2 Oe and Ns ≃ 1019/gm and these results are interpreted in terms of uncompensated surface dangling bonds. Oxygen exposure broadens the line and reduces Ns, in direct relation to the surface areas of the carbons and the effect is reversible. Possible effects of the paramagnetic oxygen on dangling bonds are discussed.

Study of dangling bonds in nanometer‐sized granulet silicon nitride by electron‐spin resonance

1993 ◽  
Vol 74 (10) ◽  
pp. 6313-6316 ◽  
Author(s):  
Tao Wang ◽  
Lide Zhang ◽  
Xiaojun Fan ◽  
Jitong Hu ◽  
Jimei Mo
Keyword(s):  
Electron Spin Resonance ◽  
Silicon Nitride ◽  
Electron Spin ◽  
Dangling Bonds ◽  
Spin Resonance

Electron-Spin-Resonance Investigation of Laser Crystallized Polycrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
K. Brendel ◽  
N. H. Nickel ◽  
K. Lips ◽  
W. Fuhs
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Polycrystalline Silicon ◽  
Dangling Bonds ◽  
Microcrystalline Silicon ◽  
Temperature Dependent ◽  
Resonance Investigation ◽  
Residual Hydrogen ◽  
Spin Resonance ◽  
Electron Spin Resonance Investigation

AbstractDoped and undoped laser crystallized polycrystalline silicon was investigated by electron-spin-resonance experiments. In P-doped samples two resonance are detected at g = 2.0053 and g = 1.998 which are due to silicon dangling bonds and conducting electrons, respectively. After crystallization a large amount of hydrogen remains in the samples. This residual hydrogen can be activated to reduce the spin density by passivating dangling-bonds. The temperature dependent investigation of the conducting electron resonance reveals that the susceptibility can be described by the sum of Pauli and Curie paramagnetism. The data are discussed in terms of models developed for single crystal and microcrystalline silicon.

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