Sulfur Hexafluoride Reactive Ion Etching of (111) Beta ‐ SiC Epitaxial Layers, Grown on (111) TiC Substrates

1995 ◽  
Vol 142 (2) ◽  
pp. 669-671 ◽  
Author(s):  
J. Wu ◽  
J. D. Parsons ◽  
D. R. Evans
Keyword(s):  
Sulfur Hexafluoride ◽  
Reactive Ion Etching ◽  
Epitaxial Layers ◽  
Ion Etching

Fabrication of Y-Splitters and Mach–Zehnder Structures on (Yb,Nb):RbTiOPO $_{\bf 4}$/RbTiOPO$_{\bf 4}$ Epitaxial Layers by Reactive Ion Etching

2015 ◽  
Vol 33 (9) ◽  
pp. 1863-1871 ◽  
Author(s):  
M. A. Butt ◽  
R. Sole ◽  
M. C. Pujol ◽  
A. Rodenas ◽  
G. Lifante ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Epitaxial Layers ◽  
Ion Etching

Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped P-Type hgcdte

1997 ◽  
Vol 487 ◽  
Author(s):  
C. A. Musca ◽  
E. P. G. Smith ◽  
J. F. Siliquini ◽  
J. M. Dell ◽  
J. Antoszewski ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Laser Beam ◽  
Reactive Ion Etching ◽  
Epitaxial Layers ◽  
Processing Conditions ◽  
Induced Current ◽  
Type Conversion ◽  
Ion Etching ◽  
Type Layer ◽  
P Type

AbstractMercury annealing of reactive ion etching (RIE) induced p- to n-type conversion in extrinsically doped p-type epitaxial layers of HgCdTe (x=0.31) has been used to reconvert n-type conversion sustained during RIE processing. For the RIE processing conditions used (400mT, CH4/H2, 90 W) p- to n-type conversion was observed using laser beam induced current (LBIC) measurements. After a sealed tube mercury anneal at 200°C for 17 hours, LBIC measurements clearly indicated no n-type converted region remained. Subsequent Hall measurements confirmed that the material consisted of a p-type layer, with electrical properties equivalent to that of the initial as-grown wafer (NA-ND=2× 1016 cm−3, μ=350 cm2.V−1.−1).

Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped p-Type HgCdTe

1997 ◽  
Vol 484 ◽  
Author(s):  
C. A. Musca ◽  
E. P. G. Smith ◽  
J. F. Siliquini ◽  
J. M. Dell ◽  
J. Antoszewski ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Laser Beam ◽  
Reactive Ion Etching ◽  
Epitaxial Layers ◽  
Processing Conditions ◽  
Induced Current ◽  
Type Conversion ◽  
Ion Etching ◽  
Type Layer ◽  
P Type

AbstractMercury annealing of reactive ion etching (RIE) induced p- to n-type conversion in extrinsically doped p-type epitaxial layers of HgCdTe (x=0.3 1) has been used to reconvert n-type conversion sustained during RIE processing. For the RIE processing conditions used (400mT, CH4/H2, 90 W) p- to n-type conversion was observed using laser beam induced current (LBIC) measurements. After a sealed tube mercury anneal at 200°C for 17 hours, LBIC measurements clearly indicated no n-type converted region remained. Subsequent Hall measurements confirmed that the material consisted of a p-type layer, with electrical properties equivalent to that of the initial as-grown wafer (NA-ND=2×1016 cm−3,.=350 cm2.V−1. S−1).

Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures

2006 ◽  
Vol 527-529 ◽  
pp. 1537-1541
Author(s):  
Alexander A. Lebedev ◽  
O. Yu. Ledyaev ◽  
Anatoly M. Strel'chuk ◽  
Alexey N. Kuznetsov ◽  
A.E. Cherenkov ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Reactive Ion Etching ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Epitaxial Layers ◽  
Electrical Characteristics ◽  
Ion Etching

The investigated AlGaN epitaxial layers were grown by hydride vapor phase epitaxy (HVPE) on a commercial P+ SiC substrate or on an N+ SiC Lely substrate with a p+ SiC layer previously grown by sublimation epitaxy. To investigate the electrical characteristics of the n-p heterojunction, mesa structures of 100, 200 and 1500 microns in diameter were fabricated by reactive ion etching. Investigation of electrical characteristics shows good quality of grown n- AlGaN/p-SiC heterojunctions. This shows applicability of this technological combination for producing n-AlGaN/p-SiC bipolar or FET transistors.

Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

1996 ◽  
Author(s):  
George F. McLane ◽  
Paul Cooke ◽  
Robert P. Moerkirk
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching
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