Investigation of Boron Diffusion into Silicon Using a Liquid Boron Tribromide Source and Its Application to Buried-Gate-Type Static-Induction Thyristors

2005 ◽  
Vol 152 (8) ◽  
pp. G601 ◽  
Author(s):  
Makoto Miyoshi ◽  
Naohiro Shimizu ◽  
Yuichiro Imanishi ◽  
Osamu Oda ◽  
Junichi Nishizawa
Keyword(s):  
Boron Diffusion ◽  
Boron Tribromide ◽  
Static Induction ◽  
Static Induction Thyristors

A novel compensator using static induction thyristors for reactive power and harmonics

2003 ◽  
Author(s):  
M. Kohata ◽  
T. Shiota ◽  
Y. Watanabe ◽  
S. Atoh ◽  
A. Nabae ◽  
...  
Keyword(s):  
Reactive Power ◽  
Static Induction ◽  
Static Induction Thyristors

Low-loss high-power static induction thyristors for complementary circuits

1988 ◽  
Vol 24 (1) ◽  
pp. 132-136 ◽  
Author(s):  
T. Kushida ◽  
H. Tadano ◽  
S. Hashimoto ◽  
M. Takigawa ◽  
I. Igarashi ◽  
...  
Keyword(s):  
High Power ◽  
Low Loss ◽  
Static Induction ◽  
Static Induction Thyristors

Research on Switching Performance of Static Induction Thyristors

2013 ◽  
Vol 336-338 ◽  
pp. 1445-1448
Author(s):  
Cai Zhen Zhang ◽  
Yong Gang Chen ◽  
Yong Shun Wang
Keyword(s):  
Physical Mechanism ◽  
Switching Time ◽  
Two Dimensional ◽  
Gate Width ◽  
Switching Performance ◽  
Static Induction ◽  
Static Induction Thyristors ◽  
Switching State

Physical mechanism for switching state of SITHs was discussed, the two-dimensional turn-off model was proposed, expressions of ton and toffwere mathematical derived. Measures to reduce the switching time of SITHs, such as reducing the gate width WG and n- region width Wn-, doping Boron atoms with higher density,etc.,were put forward and verified by experiments.

The Characteristics of ESD Protection Device Based on Static Induction Thyristors

2013 ◽  
Vol 303-306 ◽  
pp. 1803-1807
Author(s):  
Jian Hong Yang ◽  
Lin Jiao Zhang ◽  
Fei Hu Zhao
Keyword(s):  
Negative Resistance ◽  
Testing System ◽  
Protection Device ◽  
Device Structure ◽  
Novel Structure ◽  
Esd Protection ◽  
Static Induction ◽  
The Time Domain ◽  
Static Induction Thyristors ◽  
Time Domain Reflectometer

A novel structure of ESD protection device based on the static induction thyristors (SITh) was in further investigation. Detailed analysis of the negative resistance characteristics of SITh was presented, especially its blocking and conducting states that satisfy the requirements in ESD events. The characteristics of SITh for ESD protection were obtained using the Time Domain Reflectometer (TDR) type of Transmission Line Pulse (TLP) testing system. The results illustrate that SITh for ESD protection has the following advantages: 1) It has a strong ESD stress handing capability (3.75 kV); 2) Its second breakdown current is large enough (2.5 A) to release great ESD current; 3) DC leakage current of SITh is very small (1 μA); 4) SITh can break through the limitations of transitional trigger voltages, whose trigger voltage is dynamically adjustable as well; 5) The ESD response time can be controlled through optimizing device structure of SITh.

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