scholarly journals Characteristics of Top‐Gate Polysilicon Thin‐Film Transistors Fabricated on Fluorine‐Implanted and Crystallized Amorphous Silicon Films

1996 ◽  
Vol 143 (10) ◽  
pp. 3302-3307 ◽  
Author(s):  
Chien Kuo Yang ◽  
Tan Fu Lei ◽  
Chung Len Lee
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Silicon Films

scholarly journals A Comparison between Thin-Film Transistors Deposited by Hot-Wire Chemical Vapor Deposition and PECVD

10.30544/128 ◽  
2015 ◽  
Vol 21 (1) ◽  
pp. 7-14
Author(s):  
Meysam Zarchi ◽  
Shahrokh Ahangarani
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Intrinsic Stress ◽  
Hot Wire ◽  
Microcrystalline Silicon

The effect of new growth techniques on the mobility and stability of amorphous silicon (a-Si:H) thin film transistors (TFTs) has been studied. It was suggested that the key parameter controlling the field-effect mobility and stability is the intrinsic stress in the a-Si:H layer. Amorphous and microcrystalline silicon films were deposited by radiofrequency plasma enhanced chemical vapor deposition (RF-PECVD) and hot-wire chemical vapor deposition (HW-CVD) at 100 ºC and 25 ºC. Structural properties of these films were measured by Raman Spectroscopy. Electronic properties were measured by dark conductivity, σd, and photoconductivity, σph. For amorphous silicon films deposited by RF-PECVD on PET, photosensitivity's of >105 were obtained at both 100 º C and 25 ºC. For amorphous silicon films deposited by HW-CVD, a photosensitivity of > 105 was obtained at 100 ºC. Microcrystalline silicon films deposited by HW-CVD at 95% hydrogen dilution show σph~ 10-4 Ω-1cm-1, while maintaining a photosensitivity of ~102 at both 100 ºC and 25 ºC. Microcrystalline silicon films with a large crystalline fraction (> 50%) can be deposited by HW-CVD all the way down to room temperature.

Dry Thermal Oxidation of Polycrystalline and Amorphous Silicon Films for Application to Thin Film Transistors

1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1076-1081 ◽  
Author(s):  
Mitsutoshi Miyasaka ◽  
Wataru Itoh ◽  
Hiroyuki Ohshima ◽  
Tatsuya Shimoda
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thermal Oxidation ◽  
Thin Film Transistors ◽  
Silicon Films

Crystallization of Amorphous LPCVD Silicon Films and Application to Bipolar and Thin Film Transistors

1987 ◽  
Vol 106 ◽  
Author(s):  
Miltiadis K. Hatalis ◽  
David W. Greve
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Annealing Temperature ◽  
Bipolar Transistors ◽  
Silicon Films ◽  
Annealing Conditions ◽  
Polysilicon Emitter

ABSTRACTWe studied the crystallization of LPCVD amorphous silicon films by TEM and found that the grain size of crystallized films depends upon the deposition and annealing conditions. The grain size increases as the deposition and/or the annealing temperature decreases. We also investigated the application of crystallized films in the fabrication of polysilicon emitter bipolar transistors and thin film transistors. The performance of bipolar transistors was found to have a small dependence on the grain size. In contrast, the performance of thin film transistors was strongly dependent upon the grain size.

Low-temperature crystallisation of amorphous-silicon films for the fabrication of thin-film transistors

1989 ◽  
Vol 36 (1-4) ◽  
pp. 247-256 ◽  
Author(s):  
O.S. Panwar ◽  
R.A. Moore ◽  
N.S.J. Mitchell ◽  
H.S. Gamble ◽  
B.M. Armstrong
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Silicon Films
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