Nucleation Kinetics of Diamond on Carbide‐Forming Substrates during Chemical Vapor Deposition: I. Transient Nucleation Stage

1996 ◽  
Vol 143 (3) ◽  
pp. 1104-1109 ◽  
Author(s):  
Huimin Liu ◽  
David S. Dandy
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nucleation Kinetics ◽  
Nucleation Stage ◽  
Transient Nucleation ◽  
Kinetics Of

Nucleation kinetics of diamond in hot filament chemical vapor deposition

1999 ◽  
Vol 34 (14-15) ◽  
pp. 2319-2325 ◽  
Author(s):  
Jie Yu ◽  
Rong fang Huang ◽  
Lishi Wen ◽  
Changxu Shi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nucleation Kinetics ◽  
Hot Filament ◽  
Kinetics Of

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

scholarly journals Study of deposition parameters and growth kinetics of ZnO deposited by aerosol assisted chemical vapor deposition

RSC Advances ◽  
2021 ◽  
Vol 11 (30) ◽  
pp. 18493-18499
Author(s):  
Sergio Sánchez-Martín ◽  
S. M. Olaizola ◽  
E. Castaño ◽  
E. Urionabarrenetxea ◽  
G. G. Mandayo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Kinetics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Kinetics Analysis ◽  
Deposition Parameters ◽  
Kinetics Of

Impact of deposition parameters, microstructure and growth kinetics analysis of ZnO grown by Aerosol-assisted Chemical Vapor Deposition (AACVD).

Quantitative Modelling of Nucleation Kinetics in Experiments for Poly-Si Growth on Sio2 by Hot-Wire Chemical Vapor Deposition

2001 ◽  
Vol 664 ◽  
Author(s):  
Maribeth Swiatek ◽  
Jason K. Holt ◽  
Harry A. Atwater
Keyword(s):  
Activation Energy ◽  
Grain Size ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Hot Wire ◽  
Nucleation Kinetics ◽  
Temperature Dependent ◽  
Cluster Density

ABSTRACTWe apply a rate-equation pair binding model of nucleation kinetics [1] to the nucleation of Si islands grown by hot-wire chemical vapor deposition on SiO2 substrates. Previously, we had demonstrated an increase in grain size of polycrystalline Si films with H2 dilution from 40 nm using 100 mTorr of 1% SiH4 in He to 85 nm with the addition of 20 mTorr H2. [2] This increase in grain size is attributed to atomic H etching of Si monomers rather than stable Si clusters during the early stages of nucleation, decreasing the nucleation density. Atomic force microscopy (AFM) measurements show that the nucleation density increases sublinearly with time at low coverage, implying a fast nucleation rate until a critical density is reached, after which grain growth begins. The nucleation density decreases with increasing H2 dilution (H2:SiH4), which is an effect of the etching mechanism, and with increasing temperature, due to enhanced Si monomer diffusivity on SiO2. From temperature-dependent measurements, we estimate the activation energy for surface diffusion of Si monomers on SiO2 to be 0.47 ± 0.09 eV. Simulations of the temperature-dependent supercritical cluster density lead to an estimated activation energy of 0.42 eV ± 0.01 eV and a surface diffusion coefficient prefactor of 0.1 ± 0.03 cm2/s. H2-dilution-dependent simulations of the supercritical cluster density show an approximately linear relationship between the H2 dilution and the etch rate of clusters.

Mass transfer and kinetics of the chemical vapor deposition of SiC onto fibers

1998 ◽  
Vol 13 (8) ◽  
pp. 2251-2261 ◽  
Author(s):  
W. Jack Lackey ◽  
Sundar Vaidyaraman ◽  
Bruce N. Beckloff ◽  
Thomas S. Moss III ◽  
John S. Lewis
Keyword(s):  
Mass Transfer ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Total Flow ◽  
A Value ◽  
Factor Expression ◽  
Kinetics Of ◽  
Best Fit

An internally consistent set of data was generated for the chemical vapor deposition (CVD) of SiC from methyltrichlorosilane (MTS) and H2 at atmospheric pressure. A moving fiber tow was used as the substrate. Coating rates between 0.3 and 3.7 µm/min and deposition efficiencies between 24 and 48% were obtained for MTS and H2 flow rates in the range 30 to 200 cm3/min and 300 to 2000 cm3/min, respectively. The data were analyzed and found to be best fit under a mass transfer regime. Based on this fit, a value of the constant in the Chilton–Colburn j factor expression for a moving fiber tow was estimated to be 2.74 × 10−6 with a standard deviation of 3.2 × 10−7. The efficiency of the reaction was found to decrease with increases in the total flow rate, indicating that the effect of the decreased residence time of reagents in the reactor was larger than the increase in the mass transfer coefficient. Finally, a comparison between the efficiencies for a stationary and a moving tow revealed that the moving tow had a higher efficiency, possibly due to a disruption of the boundary layer by the tow motion or due to the decrease in the canning of the moving tow.

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