Formation of Nonalloyed Low Resistance Ni/Au Ohmic Contacts to p-Type GaN Using Au Nanodots [Electrochemical and Solid-State Letters, 7, G179 (2004)]

2004 ◽  
Vol 7 (10) ◽  
pp. L1 ◽  
Author(s):  
Jung Inn Sohn ◽  
June-O Song ◽  
Dong-Seok Leem ◽  
Seonghoon Lee ◽  
Tae-Yeon Seong
Keyword(s):  
Solid State ◽  
Ohmic Contacts ◽  
Low Resistance ◽  
P Type ◽  
Au Nanodots

Formation of Nonalloyed Low Resistance Ni/Au Ohmic Contacts to p-Type GaN Using Au Nanodots

2004 ◽  
Vol 7 (9) ◽  
pp. G179 ◽  
Author(s):  
Jung Inn Sohn ◽  
June-O Song ◽  
Dong-Seok Leem ◽  
Seonghoon Lee ◽  
Tae-Yeon Seong
Keyword(s):  
Ohmic Contacts ◽  
Low Resistance ◽  
P Type ◽  
Au Nanodots

Low-resistance ohmic contacts to p-type GaAs using Zn/Pd/Au metallization

1985 ◽  
Vol 6 (10) ◽  
pp. 525-527 ◽  
Author(s):  
R.C. Brooks ◽  
C.L. Chen ◽  
A. Chu ◽  
L.J. Mahoney ◽  
J.G. Mavroides ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Low Resistance ◽  
P Type

Stable Low Resistance Ohmic Contacts To p-GaN

2001 ◽  
Vol 680 ◽  
Author(s):  
Mi-Ran Park ◽  
Wayne A. Anderson
Keyword(s):  
Contact Resistance ◽  
Photoelectron Spectroscopy ◽  
Ohmic Contacts ◽  
Depth Profiling ◽  
Force Microscopy ◽  
Low Resistance ◽  
Atomic Force ◽  
Current Voltage ◽  
Thermionic Field Emission ◽  
P Type

ABSTRACTStable and low-resistance Ohmic contacts are especially important for laser diodes where high current levels are required. Good contacts are especially difficult on p-type GaN which was the motivation for this study. The GaN was epitaxially grown on (0001) sapphire substrates by MOCVD. Resistivity of this layer was 3.5 Ohm-cm and thickness was 2 microns. After conventional cleaning followed by treatment in boiling HNO3: HCl (1:3), metallization was by thermally evaporating 40 nm Au / 60 nm Ni or 70 nm Au / 55 nm Pd. Heat treatment in O2 + N2 at various temperatures followed, with best results at 600 °C or 700 °C, respectively. Best values of the contact resistance were 1.8×10−4 Ohm-cm2 for Pd/Au and 2.65×10−4 Ohm-cm2 for Ni/Au contacts. After repetitive cycling from room temperature to 600 °C, the Ni contacts were very stable and more stable than the Pd contacts. X-ray photoelectron spectroscopy depth profiling showed the Ni contacts to be NiO followed by Au at the interface for the Ni/Au contacts whereas the Pd/Au contacts exhibited a Pd: Au solid solution. Some contacts were quenched in liquid nitrogen following sintering. These contacts were much more uniform under atomic force microscopy examination and gave a 3 times lower contact resistance with the Ni/Au design. Current-voltage-temperature analysis revealed that conduction was predominantly by thermionic field emission.

Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN

2004 ◽  
Vol 84 (10) ◽  
pp. 1710-1712 ◽  
Author(s):  
Han-Ki Kim ◽  
Tae-Yeon Seong ◽  
Ilesanmi Adesida ◽  
Chak Wah Tang ◽  
Kei May Lau
Keyword(s):  
Ohmic Contacts ◽  
Low Resistance ◽  
P Type

Highly Reflective and Low Resistance Indium Tin Oxide/Ag Ohmic Contacts to p-Type GaN for Flip-Chip Light Emitting Diodes

2005 ◽  
Vol 8 (11) ◽  
pp. G320 ◽  
Author(s):  
Woong-Ki Hong ◽  
June-O Song ◽  
Hyun-Gi Hong ◽  
Keun-Yong Ban ◽  
Takhee Lee ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance ◽  
P Type

Low resistance Ti/Pt/Au ohmic contacts to p-type GaN

2000 ◽  
Vol 76 (23) ◽  
pp. 3451-3453 ◽  
Author(s):  
L. Zhou ◽  
W. Lanford ◽  
A. T. Ping ◽  
I. Adesida ◽  
J. W. Yang ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Low Resistance ◽  
P Type

Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN

1999 ◽  
Vol 74 (1) ◽  
pp. 70-72 ◽  
Author(s):  
Ja-Soon Jang ◽  
In-Sik Chang ◽  
Han-Ki Kim ◽  
Tae-Yeon Seong ◽  
Seonghoon Lee ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Low Resistance ◽  
P Type

Low-resistance and transparent ohmic contacts to p-type GaN using Zn–Ni solid solution/Au scheme

2004 ◽  
Vol 84 (23) ◽  
pp. 4663-4665 ◽  
Author(s):  
June-O Song ◽  
Dong-Seok Leem ◽  
Tae-Yeon Seong
Keyword(s):  
Solid Solution ◽  
Ohmic Contacts ◽  
Low Resistance ◽  
P Type

Low-resistance p-type ohmic contacts for high-power InGaAs/GaAs-980nm CW semiconductor lasers

Vacuum ◽  
2008 ◽  
Vol 82 (10) ◽  
pp. 977-981 ◽  
Author(s):  
Anna Szerling ◽  
Piotr Karbownik ◽  
Adam Łaszcz ◽  
Kamil Kosiel ◽  
Maciej Bugajski
Keyword(s):  
Semiconductor Lasers ◽  
High Power ◽  
Ohmic Contacts ◽  
Low Resistance ◽  
P Type
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