Study of the Electrical and Structural Characteristics of Al/Pt Ohmic Contacts on n-Type ZnO Epitaxial Layer

2004 ◽  
Vol 151 (4) ◽  
pp. G223 ◽  
Author(s):  
Han-Ki Kim ◽  
I. Adesida ◽  
K.-K. Kim ◽  
S.-J. Park ◽  
T.-Y. Seong
Keyword(s):  
Epitaxial Layer ◽  
Ohmic Contacts ◽  
Structural Characteristics

Mechanism of Nonalloyed Al Ohmic Contacts to n-Type ZnO:Al Epitaxial Layer

2004 ◽  
Vol 43 (3) ◽  
pp. 976-979 ◽  
Author(s):  
Han-Ki Kim ◽  
Tae-Yeon Seong ◽  
Koung-Kook Kim ◽  
Seoug-Ju Park ◽  
Young Soo Yoon ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Ohmic Contacts

Refractory Ohmic Contacts Formed by Electroless Deposition of Palladium and Nickel Onto N-InP

1992 ◽  
Vol 260 ◽  
Author(s):  
G. Stremsdoerfer ◽  
Y. Wang ◽  
J. R. Martin ◽  
E. Souteyrand
Keyword(s):  
Chemical Process ◽  
Ohmic Contacts ◽  
Electroless Deposition ◽  
Structural Characteristics ◽  
Inp Substrates ◽  
Ohmic Quality

ABSTRACTNi and Pd layers have been elaborated from chemical process on (100) oriented and 1018 doped n-InP substrates. The electrical and structural characteristics of these contacts have been investigated. Good refractory ohmic contacts were obtained by the annealing of these heterostructures. The ohmic quality of chemical contacts as well as those obtained with evaporated contacts is attributed to both the presence of crystallized compounds (NiP; Ni2P; PdIn3 and Pdln) and to superficial degenerescence of InP due to a phosphorus excess laying in the interphase.

Formation of low resistance nonalloyed Al/Pt ohmic contacts onn-type ZnO epitaxial layer

2003 ◽  
Vol 94 (6) ◽  
pp. 4225-4227 ◽  
Author(s):  
Han-Ki Kim ◽  
Kyoung-Kook Kim ◽  
Seong-Ju Park ◽  
Tae-Yeon Seong ◽  
Ilesanmi Adesida
Keyword(s):  
Epitaxial Layer ◽  
Ohmic Contacts ◽  
Low Resistance

Ohmic Contacts to n-Type 6H-SiC Without Post-Annealing

1996 ◽  
Vol 423 ◽  
Author(s):  
Tokuyuki Teraji ◽  
Shiro Hara ◽  
Hideyo Okushi ◽  
Koji Kajimura
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Epitaxial Layer ◽  
Ohmic Contacts ◽  
Thermionic Emission ◽  
Contact Resistivity ◽  
Current Transport ◽  
Flat Surfaces ◽  
Barrier Heights ◽  
Post Annealing

AbstractWe formed titanium Ohmic contacts to n-type 6H-SiC epitaxial layer byreducing the Schottky barrier heights. The barrier heights were reduced enough toform the Ohmic contacts by releasing the Fermi level from pinning through makingatomically-flat surfaces. The current transport by thermionic emission wasdominant at the Ti/SiC interface. Since the Ti contacts were formed without postannealing,surfaces of the Ti electrodes were flat and homogeneous maintaining asdepositedstructures. Contact resistivity was (6±1)×10−3 Ω-cm2, which is comparableto that of the annealed Ni contact formed on the SiC epitaxial layer with the samecarrier concentration.

scholarly journals Influence of gettering on aluminum ohmic contact formation

2020 ◽  
pp. 45-50
Author(s):  
V. N. Litvinenko ◽  
Ye. A. Baganov ◽  
І. M. Vikulin ◽  
V. E. Gorbachev
Keyword(s):  
Epitaxial Layer ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Reverse Current ◽  
Experimental Results ◽  
Back Side ◽  
Contact Formation ◽  
Ohmic Contact Formation

The study considers the reasons and mechanisms of degradation of reverse characteristics of varicaps with aluminum-based ohmic contacts. The authors present and analyze the experimental results on how gettering affects the reverse current of varicaps, as well as possible mechanisms of such effect. Gettering was performed with a getter site created on the back side of the substrate before the epitaxial layer is deposited on the working side of the substrate. The article demonstrates that the proposed technology using gettering is rather effective in reducing the level of reverse currents and in increasing the yield of devices.

A High Resolution Study of G.P. Zones in Aluminum - 4.2 at % Silver

1982 ◽  
Vol 40 ◽  
pp. 722-723 ◽  
Author(s):  
R. Gronsky
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Computer Simulations ◽  
Structural Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Resolution Study

The phenomenon of clustering in Al-Ag alloys has been extensively studied since the early work of Guinierl, wherein the pre-precipitation state was characterized as an assembly of spherical, ordered, silver-rich G.P. zones. Subsequent x-ray and TEM investigations yielded results in general agreement with this model. However, serious discrepancies were later revealed by the detailed x-ray diffraction - based computer simulations of Gragg and Cohen, i.e., the silver-rich clusters were instead octahedral in shape and fully disordered, atleast below 170°C. The object of the present investigation is to examine directly the structural characteristics of G.P. zones in Al-Ag by high resolution transmission electron microscopy.

SEM analysis of the change in the reaction rates with deposit structures in the copper-iron cementation system

1978 ◽  
Vol 36 (1) ◽  
pp. 456-457
Author(s):  
V. Annamalai ◽  
L.E. Murr
Keyword(s):  
Structural Characteristics ◽  
Secondary Electron Emission ◽  
Copper Deposit ◽  
Reaction Rates ◽  
Sem Analysis ◽  
Experimental Conditions ◽  
Major Drawback ◽  
Emission Mode ◽  
Scrap Iron ◽  
Image Position

Economical recovery of copper metal from leach liquors has been carried out by the simple process of cementing copper onto a suitable substrate metal, such as scrap-iron, since the 16th century. The process has, however, a major drawback of consuming more iron than stoichiometrically needed by the reaction.Therefore, many research groups started looking into the process more closely. Though it is accepted that the structural characteristics of the resultant copper deposit cause changes in reaction rates for various experimental conditions, not many systems have been systematically investigated. This paper examines the deposit structures and the kinetic data, and explains the correlations between them.A simple cementation cell along with rotating discs of pure iron (99.9%) were employed in this study to obtain the kinetic results The resultant copper deposits were studied in a Hitachi Perkin-Elmer HHS-2R scanning electron microscope operated at 25kV in the secondary electron emission mode.

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