Room Temperature Wafer Bonding Using Oxygen Plasma Treatment in Reactive Ion Etchers With and Without Inductively Coupled Plasma

2003 ◽  
Vol 150 (2) ◽  
pp. G155 ◽  
Author(s):  
Anke Sanz-Velasco ◽  
Petra Amirfeiz ◽  
Stefan Bengtsson ◽  
Cindy Colinge
Keyword(s):  
Plasma Treatment ◽  
Wafer Bonding ◽  
Inductively Coupled Plasma ◽  
Room Temperature ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Inductively Coupled

Improvement on Oxygen Vacancies Effect of High Dielectric Constant (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films Using by Plasma Treatment

2011 ◽  
Vol 239-242 ◽  
pp. 1002-1005 ◽  
Author(s):  
Kai Huang Chen ◽  
Chia Lin Wu ◽  
Jian Yang Lin ◽  
Chien Min Cheng
Keyword(s):  
Thin Films ◽  
Plasma Treatment ◽  
Inductively Coupled Plasma ◽  
Oxygen Plasma ◽  
Temperature Treatment ◽  
Oxygen Plasma Treatment ◽  
Inductively Coupled ◽  
Low Temperature Treatment ◽  
Chemical Bonding State ◽  
High Dielectric

To improve the electrical and physical properties of as-deposited BSTZ thin films, the oxygen plasma treatment process were used by a low temperature treatment. In this study, the BSTZ thin films were post-treated under 150°C and 25 mTorr in the inductively coupled plasma. After oxygen plasma process treatment, the capacitance of thin films increased from 150 to 300pF in C-V curves, and the passivation of oxygen vacancy and defect in leakage current density curves were found. The influence of oxygen plasma on the chemical bonding state and crystalline structure was investigated by using XPS and XRD measurement.

The Plasma Treatment Influence on the Adhesive Wafer Bonding by the PDAP

2014 ◽  
Vol 1015 ◽  
pp. 526-530
Author(s):  
Zhong Fang ◽  
Tao Dong ◽  
Yong He ◽  
Yan Su
Keyword(s):  
Surface Treatment ◽  
Plasma Treatment ◽  
Wafer Bonding ◽  
Bonding Strength ◽  
Shear Force ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Shearing Force ◽  
Plasma Surface ◽  
Plasma Surface Treatment

This paper focus on the Oxygen plasma surface treatment affect on the bonding strength. In shearing force tests , total 10 samples were tested. Through the shear force tests, it indicates that moderate exposure to O2 plasma could increase the bonding strength to some extent. Then the AFM tests results shows that the MR-I 9100M coating topography is about 14 nm, while after Oxygen plasma treatment the topograhy decrease to 7.9 nm. And the MR-I 9150M coating topography is about 5.5 nm, while after Oxygen plasma treatment the topograhy decrease to 4.6 nm. By AFM tests, it can be found that the Oxygen plasma surface treatment cause the decrease of the surface roughness. And it puts forward another possible explanation for the Oxygen plasma treatment can improve the bonding strength.

The role of oxygen plasma in the formation of oxygen defects in HfOx films deposited at room temperature

2015 ◽  
Vol 3 (16) ◽  
pp. 4104-4114 ◽  
Author(s):  
Mochamad Januar ◽  
Suhendro Purbo Prakoso ◽  
Sen-Yao Lan ◽  
Rama Krushna Mahanty ◽  
Shou-Yi Kuo ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Room Temperature ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Oxygen Defects

Oxygen plasma treatment controls different stoichiometries on the surface of a-HfOx films, giving a recipe to fabricate MIM and TFT devices at room-temperature.

High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Breakdown Voltage ◽  
Oxygen Plasma ◽  
Cutoff Frequency ◽  
Chemical Vapor ◽  
Current Gain ◽  
Organic Chemical ◽  
Oxygen Plasma Treatment ◽  
Gan Hemt ◽  
High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

LDI-MS examination of oxygen plasma modified polymer for designing tailored implant biointerfaces

RSC Advances ◽  
2014 ◽  
Vol 4 (50) ◽  
pp. 26240-26243 ◽  
Author(s):  
M. Gołda-Cępa ◽  
N. Aminlashgari ◽  
M. Hakkarainen ◽  
K. Engvall ◽  
A. Kotarba
Keyword(s):  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Parylene C ◽  
Modified Polymer

A versatile parylene C coating for biomaterials was fabricated by the mild oxygen plasma treatment and examined by the use of LDI-MS..

Fermi-level depinning in metal/Ge interface using oxygen plasma treatment

2019 ◽  
Vol 463 ◽  
pp. 91-95 ◽  
Author(s):  
Vallivedu Janardhanam ◽  
Hyung-Joong Yun ◽  
Inapagundla Jyothi ◽  
Shim-Hoon Yuk ◽  
Sung-Nam Lee ◽  
...  
Keyword(s):  
Fermi Level ◽  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment

Oxygen plasma treatment of HKUST-1 for porosity retention upon exposure to moisture

2017 ◽  
Vol 53 (89) ◽  
pp. 12100-12103 ◽  
Author(s):  
Jaeyeon Bae ◽  
Jin-Woo Jung ◽  
Hyo Yul Park ◽  
Chang-Hee Cho ◽  
Jinhee Park
Keyword(s):  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment

HKUST-1, a representative MOF, can be both regenerated and protected against moisture deactivation by treatment with O2 plasma.

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