Single-Wafer Hot Wall Rapid Thermal Processing for Thin Gate Oxide Films

2002 ◽  
Vol 5 (5) ◽  
pp. F11 ◽  
Author(s):  
Yoshihide Senzaki ◽  
Marci Schaefer ◽  
Joseph Sisson ◽  
Carl Barelli ◽  
Jeff Bailey ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Oxide Films ◽  
Gate Oxide ◽  
Thin Gate Oxide

5 nm Gate Oxide Grown by Rapid Thermal Processing for Future MOSFETs

1990 ◽  
Vol 29 (Part 2, No. 1) ◽  
pp. L137-L140 ◽  
Author(s):  
Hisashi Fukuda ◽  
Akira Uchiyama ◽  
Takahisa Hayashi ◽  
Toshiyuki Iwabuchi ◽  
Seigo Ohno
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Gate Oxide

Diffusion of Zn into Gaas 0.6 P0.4:Te From Zn-Doped Oxide Films By Rapid Thermal Processing

1987 ◽  
Vol 92 ◽  
Author(s):  
A. Usami ◽  
Y. Tokuda ◽  
H. Shiraki ◽  
H. Ueda ◽  
T. Wada ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Oxide Films ◽  
Zn Diffusion ◽  
Enhanced Diffusion ◽  
Conventional Furnace ◽  
Zn Concentration ◽  
The Difference ◽  
Doped Oxide

ABSTRACTRapid thermal processing using halogen lamps was applied to the diffusion of Zn into GaAs0.6 P0.4:Te from Zn-doped oxide films. The Zn diffusion coefficient of the rapid thermal diffused (RTD) samples at 800°C for 6 s was about two orders of magnitude higher than that of the conventional furnace diffused samples at 800°C for 60 min. The enhanced diffusion of Zn by RTD may be ascribed to the stress field due to the difference in the thermal expansion coefficient between the doped oxide films and GaAs0.6P0.4 materials, and due to the temperature gradient in GaAs0.6P0 4 materials. The Zn diffusion coefficient at Zn concentration of 1.0 × l018 cm−3 was 3.6 × 10−11, 3.1 × 10−11 and 5.0 × 10−12 cm2 /s for the RTD samples at 950°C for 6 s from Zn-, (Zn,Ga)- and (Zn,P)-doped oxide films, respectively. This suggests that Zn diffusibility was controlled by the P in the doped oxide films.

5 nm Gate Oxide Grown by Rapid Thermal Processing for Future MOSFETs

1989 ◽  
Author(s):  
Hisashi FUKUDA ◽  
Akira UCHIYAMA ◽  
Takahisa HAYASHI ◽  
Toshiyuki IWABUCHI ◽  
Seigo OHNO
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Gate Oxide

Oxide Growth Using the Water-Wall Arc Lamp

1985 ◽  
Vol 52 ◽  
Author(s):  
Jeffrey C. Gelpey ◽  
Paul O. Stump ◽  
Ronald A. Capodilupo
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Oxide Films ◽  
Processing System ◽  
Measurement Tool ◽  
Oxide Growth ◽  
Water Wall ◽  
Different Temperatures ◽  
Indirect Technique ◽  
Direct Feedback

ABSTRACTThe uses of Rapid Thermal Annealing or Rapid Thermal Processing (RTP) have been expanding beyond the original post implant annealing. RTP has been used to reflow low temperature oxides (PSG or BPSG), anneal silicides and to sinter contacts. One application of RTP which is beginning to receive attention is the growth of oxides or nitrides of silicon.This paper will examine the use of a commercial rapid thermal processing system based on a very high power water-wall DC arc lamp to grow oxides on silicon wafers. The work includes a study of the growth rates of oxides at different temperatures. Direct feedback control of wafer temperature and high ramp-up and cool-down rates are used to minimize the effects of temperature errors or “tails” in the temperature/time profiles. Ellipsometry is used as the primary measurement tool to characterize the oxide films.In addition to using a pure, dry oxygen atmosphere, several oxygen-argon mixtures are used. The effects of atmosphere on the growth rate of the oxide film are reported.In order to become a practical application of RTP, oxide growth must be accomplished uniformly and reproducibly. These characteristics are machine-dependent. The uniformity of films grown in this system are discussed. The growth of oxide films and the uniformity measurements are used as an indirect technique to characterize the uniformity of the system. The reproducibility of film thickness is also examined.

Ultra Low-Temperature Growth of High-Integrity Thin Gate Oxide Films by Low-Energy Ion-Assisted Oxidation

1995 ◽  
Vol 34 (Part 1, No. 2B) ◽  
pp. 900-902 ◽  
Author(s):  
Jinzo Watanabe ◽  
Yasuaki Kawai ◽  
Nobuhiro Konishi ◽  
Tadahiro Ohmi
Keyword(s):  
Low Temperature ◽  
Oxide Films ◽  
Gate Oxide ◽  
Low Energy ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
High Integrity ◽  
Thin Gate Oxide

Nitrided Gate Oxide Formed by Rapid Thermal Processing for 4H-SiC MOSFETs

2019 ◽  
Vol 35 (6) ◽  
pp. 157-164 ◽  
Author(s):  
Aurore Constant ◽  
Philippe Godignon ◽  
Josep Montserrat ◽  
Jose Millán
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Gate Oxide

The Effect of Organic Compounds Contamination on the Electrical Characteristics of Ultra-Thin Gate Oxide Films

2000 ◽  
Author(s):  
Yoshihide Wakayama ◽  
Takeshi Ohkawa ◽  
Osamu Nakamura ◽  
Sadao Kobayashi ◽  
Shigetoshi Sugawa ◽  
...  
Keyword(s):  
Organic Compounds ◽  
Oxide Films ◽  
Gate Oxide ◽  
Electrical Characteristics ◽  
Thin Gate Oxide

scholarly journals Iron Oxide Films Prepared by Rapid Thermal Processing for Solar Energy Conversion

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
B. Wickman ◽  
A. Bastos Fanta ◽  
A. Burrows ◽  
A. Hellman ◽  
J. B. Wagner ◽  
...  
Keyword(s):  
Iron Oxide ◽  
Solar Energy ◽  
Energy Conversion ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Oxide Films ◽  
Solar Energy Conversion ◽  
Iron Oxide Films

Nitridation of niobium oxide films by rapid thermal processing

2008 ◽  
Vol 390 (6) ◽  
pp. 1507-1515 ◽  
Author(s):  
V. A. Matylitskaya ◽  
W. Bock ◽  
B. O. Kolbesen
Keyword(s):  
Thermal Processing ◽  
Niobium Oxide ◽  
Rapid Thermal Processing ◽  
Oxide Films
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