In Situ Studies of the Initial Atmospheric Corrosion of Copper Influence of Humidity, Sulfur Dioxide, Ozone, and Nitrogen Dioxide

2000 ◽  
Vol 147 (7) ◽  
pp. 2543 ◽  
Author(s):  
T. Aastrup ◽  
M. Wadsak ◽  
C. Leygraf ◽  
M. Schreiner
Keyword(s):  
Sulfur Dioxide ◽  
Nitrogen Dioxide ◽  
Atmospheric Corrosion ◽  
In Situ Studies

2007 W.R. Whitney Award Lecture:Molecular In Situ Studies of Atmospheric Corrosion

CORROSION ◽  
2007 ◽  
Vol 63 (8) ◽  
pp. 715-721 ◽  
Author(s):  
C. Leygraf ◽  
J. Hedberg ◽  
P. Qiu ◽  
H. Gil ◽  
J. Henriquez ◽  
...  
Keyword(s):  
Atmospheric Corrosion ◽  
In Situ Studies

In Situ Studies of the Effect of CO[sub 2] on the Initial NaCl-Induced Atmospheric Corrosion of Copper

2005 ◽  
Vol 152 (9) ◽  
pp. B342 ◽  
Author(s):  
Z. Y. Chen ◽  
D. Persson ◽  
A. Nazarov ◽  
S. Zakipour ◽  
D. Thierry ◽  
...  
Keyword(s):  
Atmospheric Corrosion ◽  
In Situ Studies

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

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