Characterization of Yttria-Stabilized Zirconia Thin Films Prepared by Radio Frequency Magnetron Sputtering for a Combustion Control Oxygen Sensor

2000 ◽  
Vol 147 (6) ◽  
pp. 2380 ◽  
Author(s):  
J. W. Bae ◽  
J. Y. Park ◽  
S. W. Hwang ◽  
G. Y. Yeom ◽  
K. D. Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Oxygen Sensor ◽  
Radio Frequency Magnetron ◽  
Yttria Stabilized Zirconia ◽  
Combustion Control ◽  
Radio Frequency Magnetron Sputtering ◽  
Stabilized Zirconia

scholarly journals Physical and Electrical Properties of Yttria-Stabilized Zirconia Thin Films Prepared by Radio Frequency Magnetron Sputtering

10.14311/1743 ◽  
2013 ◽  
Vol 53 (2) ◽  
Author(s):  
Dmitriy A. Golosov ◽  
Sergey M. Zavatskiy ◽  
Sergey N. Melnikov
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Xrd Analysis ◽  
Radio Frequency Magnetron ◽  
Yttria Stabilized Zirconia ◽  
Radio Frequency Magnetron Sputtering ◽  
Stabilized Zirconia ◽  
Temperature Range ◽  
Mobile Ions ◽  
Deposited Films

This paper presents the electrophysical characteristics of a 7 mol.% yttria-stabilized zirconia (YSZ) thin film deposited by radio-frequency magnetron sputtering. In order to form the crystallinestructure, the deposited films were annealed in air over a temperature range of 700 ÷ 900 °C. By XRD analysis it was established that as the deposited films were amorphous, they crystallized into a pure cubic structure as a result of annealing in air at a temperature above 820 °C.The electrophysical properties of YSZ films were investigated on structures such¨as Ni/YSZ/Pt/Ti/Si and Ni/YSZ/Si. Film features ? > 20 and tg ? < 0.05 were obtained. An estimate of the capacity-voltage characteristic proved that the Ni/YSZ/Si structures possessed a hysteresis. This hysteresis resulted from the drift of the mobile ions in the YSZ film. High-temperature ionic conductivity of the stabilized zirconia was determined by the measurements of the electric resistivity of the YSZ films at 1 kHz over the temperature range from ambient to 800 °C. The YSZ film conductivity obtained was 1.96 × 10-2 S/cm under 800 °C.

Characterization of Ferroelectric SrBi2Ta2 O 9 Thin Films Deposited by a Radio Frequency Magnetron Sputtering Technique

1997 ◽  
Vol 144 (8) ◽  
pp. 2855-2858 ◽  
Author(s):  
Sang‐Shik Park ◽  
Cheol‐Hoon Yang ◽  
Soon‐Gil Yoon ◽  
Jun‐Hyung Ahn ◽  
Ho‐Gi Kim
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering
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