Deposition of Fluorinated Amorphous Carbon Thin Films as a Low‐Dielectric‐Constant Material

1999 ◽  
Vol 146 (9) ◽  
pp. 3383-3388 ◽  
Author(s):  
Sang‐Soo Han ◽  
Hun Rae Kim ◽  
Byeong‐Soo Bae
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Amorphous Carbon ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Carbon Thin Films

Application of Fluorinated Amorphous Carbon Thin Films for Low Dielectric Constant Interlayer Dielectrics

1998 ◽  
Vol 37 (Part 1, No. 4A) ◽  
pp. 1809-1814 ◽  
Author(s):  
Kazuhiko Endo ◽  
Toru Tatsumi ◽  
Yoshihisa Matsubara ◽  
Tadahiko Horiuchi
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Amorphous Carbon ◽  
Low Dielectric Constant ◽  
Interlayer Dielectrics ◽  
Low Dielectric ◽  
Carbon Thin Films

Deposition of Fluorinated Amorphous Carbon Thin Films with Low Dielectric Constant and Thermal Stability

2000 ◽  
Vol 612 ◽  
Author(s):  
Sang-Soo Han ◽  
Byeong-Soo Bae
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Dielectric Constant ◽  
Amorphous Carbon ◽  
Inductively Coupled Plasma ◽  
Gas Flow ◽  
Stable Condition ◽  
Flow Rate Ratio ◽  
Low Dielectric Constant ◽  
Low Dielectric

AbstractFluorinated amorphous carbon (a-C:F) thin films were deposited by inductively coupled plasma enhanced chemical vapor deposition (ICP-CVD) with increasing CF4:CH4 gas flow rate ratio, and then annealed with increasing annealing temperature (100, 200, 300, and 400.). We have found the reduction mechanism of the dielectric constant and the thermally stable condition for the a-C:F films. On the basis of the results, the optimal condition to satisfy both the low dielectric constant and the thermal stability is followed as; the a-C:F films have to have the compatible F content to make a compromise between the two properties; the C-Fx bonding configuration has to exist as a form of C-F2 & C-F3 instead of C-F; The films should be somewhat cross-linked structure.

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