Atomic Layer Epitaxy of Tungsten Oxide Films Using Oxyfluorides as Metal Precursors

1999 ◽  
Vol 146 (8) ◽  
pp. 3139-3143 ◽  
Author(s):  
P. Tägtström ◽  
P. Maårtensson ◽  
U. Jansson ◽  
J.‐O. Carlsson
Keyword(s):  
Tungsten Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Metal Precursors

Deposition and etching of tantalum oxide films in atomic layer epitaxy process

1994 ◽  
Vol 144 (1-2) ◽  
pp. 116-119 ◽  
Author(s):  
Jaan Aarik ◽  
Aleks Aidla ◽  
Kaupo Kukli ◽  
Teet Uustare
Keyword(s):  
Tantalum Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

scholarly journals Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy

2019 ◽  
Vol 37 (6) ◽  
pp. 060909 ◽  
Author(s):  
David R. Boris ◽  
Virginia D. Wheeler ◽  
Jason R. Avila ◽  
Syed B. Qadri ◽  
Charles R. Eddy ◽  
...  
Keyword(s):  
Oxide Films ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Plasma Properties

Layered tantalum-aluminum oxide films deposited by atomic layer epitaxy

1993 ◽  
Vol 225 (1-2) ◽  
pp. 296-298 ◽  
Author(s):  
H. Kattelus ◽  
M. Ylilammi ◽  
J. Saarilahti ◽  
J. Antson ◽  
S. Lindfors
Keyword(s):  
Aluminum Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Atomic Layer Deposition of Ultrathin Tungsten Oxide Films from WH2(Cp)2 and Ozone

2021 ◽  
Author(s):  
Maxim G. Kozodaev ◽  
Roman I. Romanov ◽  
Anna G. Chernikova ◽  
Andrey M. Markeev
Keyword(s):  
Atomic Layer Deposition ◽  
Tungsten Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Layer Deposition

Electrical Properties of Tantalum Based Composite Oxide Films

1992 ◽  
Vol 284 ◽  
Author(s):  
Hannu Kattelus ◽  
Markku Ylilammi ◽  
Jorma Salmi ◽  
Timo Ranta-Aho ◽  
Erjany Kanen ◽  
...  
Keyword(s):  
Leakage Current ◽  
Hafnium Oxide ◽  
Tantalum Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Layered Composite ◽  
Atomic Layer Epitaxy ◽  
Oxygen Species ◽  
Composite Oxide ◽  
New Class

ABSTRACTTantalum oxide is a widely used insulator in electronic applications requiring high permittivity. When deposited at low temperature, tantalum oxide films, however, often exhibit large leakage current. A common way to reduce leakage is to anneal the films in an ambient containing extremely reactive oxygen species, or at high temperature in dry oxygen. A different approach is to use composite oxide materials. We have studied layered tantalum based oxide films deposited by Atomic Layer Epitaxy, and observed that the leakage current is decreased by several orders of magnitude when a fraction of tantalum oxide is replaced by another oxide, such as aluminum or hafnium oxide. Leakage current density of 40 nA/cm2 in the electric field of 1 MV/cm is attained for unannealed Ta-Hf-O film deposited at 300°C. Layered composite insulators are an interesting new class of materials, and ALE proves to be a useful method for depositing them.

Growth and evaluation of GaAsN films with different N distribution grown by atomic layer epitaxy method

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGF10
Author(s):  
Masahiro Kawano ◽  
Ryo Minematsu ◽  
Tomohiro Haraguchi ◽  
Atsuhiko Fukuyama ◽  
Hidetoshi Suzuki
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
N Distribution

Optical properties of Zn(S,Se) sawtooth superlattices grown by atomic layer epitaxy

1996 ◽  
Vol 80 (4) ◽  
pp. 2363-2366 ◽  
Author(s):  
Hiroyuki Fujiwara ◽  
Toshiyuki Nabeta ◽  
Isamu Shimizu ◽  
Takashi Yasuda
Keyword(s):  
Optical Properties ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

scholarly journals Spatially Ordered Matrix of Nanostructured Tin–Tungsten Oxides Nanocomposites Formed by Ionic Layer Deposition for Gas Sensing

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4169
Author(s):  
Gennady Gorokh ◽  
Natalia Bogomazova ◽  
Abdelhafed Taleb ◽  
Valery Zhylinski ◽  
Timur Galkovsky ◽  
...  
Keyword(s):  
Tungsten Oxide ◽  
Gas Sensing ◽  
Oxide Films ◽  
High Sensitivity ◽  
Anodic Alumina ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Layer By Layer ◽  
Gas Sensitivity ◽  
Nanoporous Anodic Alumina

The process of layer-by-layer ionic deposition of tin-tungsten oxide films on smooth silicon substrates and nanoporous anodic alumina matrices has been studied. To achieve the film deposition, solutions containing cationic SnF2 or SnCl2 and anionic Na2WO4 or (NH4)2O·WO3 precursors have been used. The effect of the solution compositions on the films deposition rates, morphology, composition, and properties was investigated. Possible mechanisms of tin-tungsten oxide films deposition into the pores and on the surface of anodic alumina are discussed. The electro-physical and gas-sensitive properties of nanostructured SnxWyOz films have been investigated. The prepared nanocomposites exhibit stable semiconductor properties characterized by high resistance and low temperature coefficient of electrical resistance of about 1.6 × 10−3 K−1. The sensitivity of the SnxWyOz films to 2 and 10 ppm concentrations of ammonia at 523 K was 0.35 and 1.17, respectively. At concentrations of 1 and 2 ppm of nitrogen dioxide, the sensitivity was 0.48 and 1.4, respectively, at a temperature of 473 K. At the temperature of 573 K, the sensitivity of 1.3 was obtained for 100 ppm of ethanol. The prepared nanostructured tin-tungsten oxide films showed promising gas-sensitivity, which makes them a good candidate for the manufacturing of gas sensors with high sensitivity and low power consumption.

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