Improvements in Both Thermal Stability of Ni-Silicide and Electrical Reliability of Gate Oxides Using a Stacked Polysilicon Gate Structure

2001 ◽  
Vol 148 (9) ◽  
pp. G530
Author(s):  
Jam Wem Lee ◽  
Shen-Xiang Lin ◽  
Tan-Fu Lei ◽  
Chung-Len Lee
Keyword(s):  
Thermal Stability ◽  
Gate Oxides ◽  
Polysilicon Gate ◽  
Gate Structure ◽  
Electrical Reliability ◽  
Thermal Stability Of

Using CoSi2 /Polysilicon Polycide Structure as a Gate Diffusion Source in Rapid Thermal Processing

1993 ◽  
Vol 303 ◽  
Author(s):  
W. Chen ◽  
J. Lin ◽  
S. Banerjee ◽  
J. Lee
Keyword(s):  
Thermal Stability ◽  
Gate Oxide ◽  
Oxide Interface ◽  
Excellent Thermal Stability ◽  
Good Thermal Stability ◽  
Polysilicon Gate ◽  
Gate Structure ◽  
Diffusion Source ◽  
Short Time ◽  
Thermal Stability Of

ABSTRACTIon implanted CoSi2 as a gate doping source has been studied as a compatible process to the Silicide-As Diffusion-Source (SADS) process which has been widely considered for shallow source/drain junction formation. The effects of the polysilicon gate microstructure on diffusion behavior and the thermal stability of CoSi2 has been investigated. It has been found that CoSi2 formed on reoxidized polysilicon gates has poor thermal stability but requires short time to achieve degenerate doping near the polysilicon/gate oxide interface. On the other hand, CoSi2 formed on as-deposited amorphous silicon has excellent thermal stability but requires longer time to achieve degenerate doping near the polysilicon/gate oxide interface. The trade-off between the required thermal budget to achieve degenerate doping and thermal stability of the CoSi2/polysilicon gate structure will be discussed. In optimizing the process, our results indicated that reoxidized amorphous Si gates have both good thermal stability as well requiring short time to achieve degenerate doping. The thermal degradation of CoSi2 was found to have little effect on the gate oxide breakdown voltage.

Impact of nitrogen (N/sub 2//sup +/) implantation into polysilicon gate on thermal stability of cobalt silicide formed on polysilicon gate

1998 ◽  
Vol 45 (9) ◽  
pp. 1912-1919 ◽  
Author(s):  
Wein-Town Sun ◽  
Ming-Chi Liaw ◽  
Kuang-Chien Hsieh ◽  
Charles Ching-Hsiang Hsu
Keyword(s):  
Thermal Stability ◽  
Cobalt Silicide ◽  
Polysilicon Gate ◽  
Thermal Stability Of

Mechanism of Improved Thermal Stability of Cobalt Silicide Formed on Polysilicon Gate by Nitrogen Implantation

1998 ◽  
Vol 37 (Part 1, No. 11) ◽  
pp. 5854-5860 ◽  
Author(s):  
Wein-Town Sun ◽  
Hai-Ming Lee ◽  
Ming-Chi Liaw ◽  
Charles Ching-Hsiang Hsu
Keyword(s):  
Thermal Stability ◽  
Cobalt Silicide ◽  
Nitrogen Implantation ◽  
Polysilicon Gate ◽  
Thermal Stability Of

Characterization of PECVD Wnx for Copper Barrier Application

1999 ◽  
Vol 564 ◽  
Author(s):  
A. Vijayendran ◽  
M. Danek
Keyword(s):  
Thermal Stability ◽  
Fluorine Content ◽  
Barrier Properties ◽  
Fluorine Concentration ◽  
Resistance Change ◽  
Mos Capacitors ◽  
Temperature Programmed ◽  
Electrical Reliability ◽  
Thermal Stability Of

AbstractWe evaluated PECVD WNx as a potential copper barrier. Ultrathin (100 Å) PECVD WNx films were deposited utilizing WF6/N2/H2 chemistry. Films with N/W stoichiometries ranging from 0.1 to 1.0 and resistivities between 200 – 1000 μΩ-cm were deposited by varying pressure, deposition temperature, N2 flow, and H2 flow. The thermal stability of the films was evaluated by annealing Si/WNx /Cu stacks for 1 hour at temperatures up to 700°C. Barrier failure was detected by sheet resistance change and surface SIMS. The thermal stability was correlated with N/W ratio and free fluorine content as determined by temperature programmed desorption mass spectroscopy. The tests showed that films with N/W ratios between 0.3 and 0.4 had optimal barrier properties, while fluorine was seen to have a detrimental effect on barrier stability. Moreover, tests showed that the substrate affects fluorine concentration as WNx deposited on silicon dioxide has a higher interfacial fluorine content than WNx on silicon. Thus, fluorine contamination at the WNx /Si02 interface led to poor electrical reliability as measured by leakage current vs. time on MOS capacitors.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal stability of Al-Cu-Fe icosahedral alloys

1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of

Practical criteria for the thermal stability of a unidimensional superconductor

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of

Time and thermal stability of magnetic properties of amorphous Fe80TM3B17 alloys

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-63-Pr2-66 ◽  
Author(s):  
R. Varga ◽  
P. Vojtaník ◽  
A. Lovas
Keyword(s):  
Thermal Stability ◽  
Magnetic Properties ◽  
Thermal Stability Of
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