In Situ Resistivity Measurements and Optical Transmission and Reflection Spectroscopy of Electrochemically Loaded Switchable  YH  x Films

1999 ◽  
Vol 146 (8) ◽  
pp. 2990-2994 ◽  
Author(s):  
E. S. Kooij ◽  
A. T. M. van Gogh ◽  
R. Griessen
2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940027
Author(s):  
A. Mudryi ◽  
O. Borodavchenko ◽  
V. Zhivulko ◽  
M. Yakushev ◽  
M. Sulimov

The bandgaps of 1.187[Formula: see text]eV in non-irradiated nanostructured thin films of Cu(In,Ga)Se2 (CIGSe) and of 1.182[Formula: see text]eV in those films irradiated with 10[Formula: see text]keV hydrogen ions were determined using optical transmission and reflection spectroscopy at 4.2[Formula: see text]K. The observed reduction in the bandgap is assigned to the formation of secondary antisite defect complexes inducing band tails of the density of states in the valence band.


Author(s):  
W. E. King

A side-entry type, helium-temperature specimen stage that has the capability of in-situ electrical-resistivity measurements has been designed and developed for use in the AEI-EM7 1200-kV electron microscope at Argonne National Laboratory. The electrical-resistivity measurements complement the high-voltage electron microscope (HVEM) to yield a unique opportunity to investigate defect production in metals by electron irradiation over a wide range of defect concentrations.A flow cryostat that uses helium gas as a coolant is employed to attain and maintain any specified temperature between 10 and 300 K. The helium gas coolant eliminates the vibrations that arise from boiling liquid helium and the temperature instabilities due to alternating heat-transfer mechanisms in the two-phase temperature regime (4.215 K). Figure 1 shows a schematic view of the liquid/gaseous helium transfer system. A liquid-gas mixture can be used for fast cooldown. The cold tip of the transfer tube is inserted coincident with the tilt axis of the specimen stage, and the end of the coolant flow tube is positioned without contact within the heat exchanger of the copper specimen block (Fig. 2).


Sensors ◽  
2021 ◽  
Vol 21 (7) ◽  
pp. 2449
Author(s):  
Marion Baillieul ◽  
Emeline Baudet ◽  
Karine Michel ◽  
Jonathan Moreau ◽  
Petr Němec ◽  
...  

The objective of this study is to demonstrate the successful functionalization of the surface of a chalcogenide infrared waveguide with the ultimate goal of developing an infrared micro-sensor device. First, a polyisobutylene coating was selected by testing its physico-chemical compatibility with a Ge-Sb-Se selenide surface. To simulate the chalcogenide platform infrared sensor, the detection of benzene, toluene, and ortho-, meta- and para-xylenes was efficaciously performed using a polyisobutylene layer spin-coated on 1 and 2.5 µm co-sputtered selenide films of Ge28Sb12Se60 composition deposited on a zinc selenide prism used for attenuated total reflection spectroscopy. The thickness of the polymer coating was optimized by attenuated total reflection spectroscopy to achieve the highest possible attenuation of water absorption while maintaining the diffusion rate of the pollutant through the polymer film compatible with the targeted in situ analysis. Then, natural water, i.e., groundwater, wastewater, and seawater, was sampled for detection measurement by means of attenuated total reflection spectroscopy. This study is a valuable contribution concerning the functionalization by a hydrophobic polymer compatible with a chalcogenide optical sensor designed to operate in the mid-infrared spectral range to detect in situ organic molecules in natural water.


2006 ◽  
Vol 326-328 ◽  
pp. 689-692
Author(s):  
Seung Jae Moon

The thermal conductivity of amorphous silicon (a-Si) thin films is determined by using the non-intrusive, in-situ optical transmission measurement. The thermal conductivity of a-Si is a key parameter in understanding the mechanism of the recrystallization of polysilicon (p-Si) during the laser annealing process to fabricate the thin film transistors with uniform characteristics which are used as switches in the active matrix liquid crystal displays. Since it is well known that the physical properties are dependent on the process parameters of the thin film deposition process, the thermal conductivity should be measured. The temperature dependence of the film complex refractive index is determined by spectroscopic ellipsometry. A nanosecond KrF excimer laser at the wavelength of 248 nm is used to raise the temperature of the thin films without melting of the thin film. In-situ transmission signal is obtained during the heating process. The acquired transmission signal is fitted with predictions obtained by coupling conductive heat transfer with multi-layer thin film optics in the optical transmission measurement.


2014 ◽  
Vol 447 (1-3) ◽  
pp. 225-232 ◽  
Author(s):  
B. Gómez-Ferrer ◽  
R. Vila ◽  
D. Jiménez-Rey ◽  
C.J. Ortiz ◽  
F. Mota ◽  
...  

2020 ◽  
Vol 825 ◽  
pp. 154108
Author(s):  
I.-E. Benrabah ◽  
G. Altinkurt ◽  
M. Fèvre ◽  
M. Dehmas ◽  
B. Denand ◽  
...  

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