Chemical Vapor Deposition Reactor Design Using Small‐Scale Diagnostic Experiments Combined with Computational Fluid Dynamics Simulations

1999 ◽  
Vol 146 (5) ◽  
pp. 1780-1788 ◽  
Author(s):  
Y. K. Chae ◽  
Y. Egashira ◽  
Y. Shimogaki ◽  
K. Sugawara ◽  
H. Komiyama
Keyword(s):  
Fluid Dynamics ◽  
Computational Fluid Dynamics ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Reactor Design ◽  
Small Scale ◽  
Chemical Vapor Deposition Reactor ◽  
Computational Fluid Dynamics Simulations ◽  
Dynamics Simulations

Computational Fluid Dynamics in the Carbon Nanotubes Synthesis by Chemical Vapor Deposition

2012 ◽  
Vol 1479 ◽  
pp. 111-116 ◽  
Author(s):  
Alejandro Gómez Sánchez ◽  
Lada Domratcheva Lvova ◽  
Víctor López Garza ◽  
Ramón Román Doval ◽  
María de Lourdes Mondragón Sánchez
Keyword(s):  
Fluid Dynamics ◽  
Carbon Nanotubes ◽  
Computational Fluid Dynamics ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Carrier Gas ◽  
Deposition Patterns ◽  
Carrier Gas Flow

ABSTRACTIn this paper, an experimental study aimed at achieving better control of the deposition patterns of carbon nanotubes (CNTs) is presented. CNTs were grown on a long of reactor by the catalytic chemical vapor deposition (CVD) of a benzene/ferrocene solution at 1073 K. The deposition patterns on the substrate were controlled for process times and carrier gas flow rates. In order to investigate the reaction mechanism and production rate for the growth of CNTs in catalyst CVD, computational fluid dynamics (CFD) model was developed in this study. Then the computational model was integrated with the dynamic model to optimize the process parameters formulating a correlation between turbulence, deposition rate for the growth of carbon nanotubes and parameters as process time and carrier gas flow rate. Scanning electron microscopes (SEM) are used to characterize carbon nanotubes products.

scholarly journals A model for carbon incorporation from trimethyl gallium in chemical vapor deposition of gallium nitride

2016 ◽  
Vol 4 (4) ◽  
pp. 863-871 ◽  
Author(s):  
Örjan Danielsson ◽  
Xun Li ◽  
Lars Ojamäe ◽  
Erik Janzén ◽  
Henrik Pedersen ◽  
...  
Keyword(s):  
Fluid Dynamics ◽  
Computational Fluid Dynamics ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Chemical ◽  
Chemical Vapor ◽  
Carbon Doping ◽  
Semiconductor Materials ◽  
Carbon Incorporation ◽  
Trimethyl Gallium

Carbon doping during CVD of GaN semiconductor materials is modeled using ab initio quantum chemical calculations and computational fluid dynamics.

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