Electronic and Structural Properties of Partially Crystallized Silicon Produced by Solid‐Phase Crystallization of As‐Deposited Amorphous Silicon

1999 ◽  
Vol 146 (1) ◽  
pp. 306-312 ◽  
Author(s):  
J. P. Smith ◽  
W. Eccleston ◽  
P. D. Brown ◽  
C. J. Humphreys
Keyword(s):  
Amorphous Silicon ◽  
Structural Properties ◽  
Solid Phase ◽  
Solid Phase Crystallization ◽  
Electronic And Structural Properties

Electronic and structural properties of implanted xenon in amorphous silicon

2007 ◽  
Vol 90 (16) ◽  
pp. 164104 ◽  
Author(s):  
P. F. Barbieri ◽  
R. Landers ◽  
F. C. Marques
Keyword(s):  
Amorphous Silicon ◽  
Structural Properties ◽  
Electronic And Structural Properties

Stress Induced During the Solid-phase Crystallization of Amorphous Silicon Deposited by LPCVD

1995 ◽  
Vol 403 ◽  
Author(s):  
T. Mohammed-Brahim ◽  
K. Kis-Sion ◽  
D. Briand ◽  
M. Sarret ◽  
F. Lebihan ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Chemical Vapor ◽  
In Situ Monitoring ◽  
Crystallization Time ◽  
Solid Phase Crystallization ◽  
Pressure Chemical ◽  
Hall Effect Measurements ◽  
Deposition Techniques

AbstractThe Solid Phase Crystallization (SPC) of amorphous silicon films deposited by Low Pressure Chemical Vapor phase Deposition (LPCVD) using pure silane at 550'C was studied by in-situ monitoring the film conductance. The saturation of the conductance at the end of the crystallization process is found transient. The conductance decreases slowly after the onset of the saturation. This degradation is also observed from other analyses such as ellipsometry spectra, optical transmission and Arrhenius plots of the conductivity between 250 and 570K. Hall effect measurements show that the degradation is due to a decrease of the free carrier concentration n and not to a decrease of the mobility. This indicates a constant barrier height at the grain boundaries. The decrease of n is then due to a defect creation in the grain. Hence, whatever the substrate used, an optimum crystallization time exists. It depends on the amorphous quality film which is determined by the deposition techniques and conditions and on the crystallization parameters.

Polycrystalline Silicon Films Formed by Solid-Phase Crystallization of Amorphous Silicon: the Substrate Effects on Crystallization Kinetics and Mechanism

1996 ◽  
Vol 424 ◽  
Author(s):  
Y.-H. Song ◽  
S.-Y. Kang ◽  
K. I. Cho ◽  
H. J. Yoo ◽  
J. H. Kim ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Solid Phase Crystallization ◽  
Substrate Effects ◽  
Random Nucleation ◽  
Pressure Chemical ◽  
Si Films ◽  
Polycrystalline Silicon Films ◽  
Induced Crystallization

AbstractThe substrate effects on the solid-phase crystallization of amorphous silicon (a-Si) have been extensively investigated. The a-Si films were prepared on two kinds of substrates, a thermally oxidized Si wafer (SiO2/Si) and a quartz, by low-pressure chemical vapor deposition (LPCVD) using Si2H6 gas at 470 °C and annealed at 600 °C in an N2 ambient for crystallization. The analysis using XRD and Raman scattering shows that crystalline nuclei are faster formed on the SiO2/Si than on the quartz, and the time needed for the complete crystallization of a-Si films on the SiO2/Si is greatly reduced to 8 h from ˜15 h on the quartz. In this study, it was first observed that crystallization in the a-Si deposited on the SiO2/Si starts from the interface between the a-Si film and the thermal oxide of the substrate, called interface-induced crystallization, while random nucleation process dominates on the quartz. The very smooth surface of the SiO2/Si substrate is responsible for the observed interface-induced crystallization of a-Si films.

On the transient amorphous silicon structures during solid phase crystallization

2013 ◽  
Vol 363 ◽  
pp. 172-177 ◽  
Author(s):  
F. Law ◽  
H. Hidayat ◽  
A. Kumar ◽  
P. Widenborg ◽  
J. Luther ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Solid Phase Crystallization ◽  
Silicon Structures

Solid-phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing

1998 ◽  
Vol 135 (1-4) ◽  
pp. 205-208 ◽  
Author(s):  
Yongqian Wang ◽  
Xianbo Liao ◽  
Zhixun Ma ◽  
Guozhen Yue ◽  
Hongwei Diao ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Silicon Films ◽  
Solid Phase Crystallization ◽  
Dopant Activation

Real Time Spectroscopic Ellipsometry Studies of the Solid Phase Crystallization of Amorphous Silicon

1998 ◽  
Vol 507 ◽  
Author(s):  
H. Fujiwara ◽  
Joohyun Koh ◽  
Yeeheng Lee ◽  
C. R. Wronski ◽  
R. W. Collins
Keyword(s):  
Amorphous Silicon ◽  
Real Time ◽  
Spectroscopic Ellipsometry ◽  
Volume Fraction ◽  
Solid Phase ◽  
Thin Layers ◽  
Crystallization Time ◽  
Calibration Data ◽  
Solid Phase Crystallization ◽  
Near Surface

ABSTRACTWe have introduced real time spectroscopic ellipsometry (RTSE) for characterization of the solid phase crystallization (SPC) of intrinsic and n-type amorphous silicon (a-Si:H) thin films. RTSE has several advantages in the study and design of SPC processes for thin film transistor and solar cell fabrication. These include the capability of obtaining (i) calibration data that yield the near surface temperature of the film during processing, (ii) the volume fraction of the crystalline Si component of the film continuously versus time during SPC, and (iii) a measurement of the grain size and quality of the final polycrystalline Si film. For the thin layers studied here (∼150-1000 Å), we demonstrate excellent fitting of the SPC dynamics to the Avrami-Johnson-Mehl theory for random nucleation and two-dimensional crystallite growth. For a-Si:H n-layers, the crystallization time over the range from 565 to 645°C appears to be weakly activated with an energy of 0.6 eV.

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