Integration of Thin Film Transistor Controlled Carbon Nanotubes for Field Emission Devices

2001 ◽  
Vol 4 (4) ◽  
pp. H5 ◽  
Author(s):  
Huang-Chung Cheng ◽  
Wei-Kai Hong ◽  
Fu-Gow Tarntair ◽  
Kuo-Ji Chen ◽  
Jia-Bin Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Field Emission ◽  
Thin Film Transistor ◽  
Field Emission Devices

Large field emission from carbon nanotubes grown on patterned catalyst thin film by thermal chemical vapor deposition

2002 ◽  
Vol 323 (1-4) ◽  
pp. 171-173 ◽  
Author(s):  
Takashi Ikuno ◽  
Tetsuro Yamamoto ◽  
Motoki Kamizono ◽  
Syunji Takahashi ◽  
Hiroshi Furuta ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Field Emission ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Field ◽  
Thermal Chemical Vapor Deposition

L-3: Late-News Paper: Active-Controlled Diode Emitters with Thin-Film Transistor and Carbon Nanotubes for FED Applications

2000 ◽  
Vol 31 (1) ◽  
pp. 1252 ◽  
Author(s):  
Yoon-Ho Song ◽  
Do-Hyung Kim ◽  
Sang-Woo Lee ◽  
Sang-Kyun Lee ◽  
Moon-Youn Jung ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Thin Film Transistor ◽  
Late News

scholarly journals All-Printed Thin-Film Transistor Based on Purified Single-Walled Carbon Nanotubes with Linear Response

2011 ◽  
Vol 2011 ◽  
pp. 1-4 ◽  
Author(s):  
Guiru Gu ◽  
Yunfeng Ling ◽  
Runyu Liu ◽  
Puminun Vasinajindakaw ◽  
Xuejun Lu ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Field Effect Transistors ◽  
Thin Film Transistor ◽  
Oxide Semiconductor ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Analog Electronics ◽  
The One ◽  
Walled Carbon Nanotubes

We report an all-printed thin-film transistor (TFT) on a polyimide substrate with linear transconductance response. The TFT is based on our purified single-walled carbon nanotube (SWCNT) solution that is primarily consists of semiconducting carbon nanotubes (CNTs) with low metal impurities. The all-printed TFT exhibits a high ON/OFF ratio of around 103and bias-independent transconductance over a certain gate bias range. Such bias-independent transconductance property is different from that of conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) due to the special band structure and the one-dimensional (1D) quantum confined density of state (DOS) of CNTs. The bias-independent transconductance promises modulation linearity for analog electronics.

Solution-Processable Carbon Nanotubes for Semiconducting Thin-Film Transistor Devices

2010 ◽  
Vol 22 (11) ◽  
pp. 1278-1282 ◽  
Author(s):  
Chun Wei Lee ◽  
Xuanding Han ◽  
Fuming Chen ◽  
Jun Wei ◽  
Yuan Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Thin Film Transistor ◽  
Solution Processable

High Field-Emission Stability of Offset-Thin-Film Transistor-Controlled Al-Doped Zinc Oxide Nanowires

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DN07 ◽  
Author(s):  
Po-Yu Yang ◽  
Jyh-Liang Wang ◽  
Wei-Chih Tsai ◽  
Shui-Jinn Wang ◽  
Jia-Chuan Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Field Emission ◽  
High Field ◽  
Thin Film Transistor ◽  
Zinc Oxide Nanowires ◽  
Oxide Nanowires ◽  
Emission Stability

Field emission properties of RuO2 thin film coated on carbon nanotubes

Vacuum ◽  
2010 ◽  
Vol 84 (12) ◽  
pp. 1427-1429 ◽  
Author(s):  
Ching-An Chen ◽  
Kuei-Yi Lee ◽  
Yi-Min Chen ◽  
Ji-Guang Chi ◽  
Shan-Shan Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Field Emission ◽  
Emission Properties ◽  
Field Emission Properties

Uniform arrays of carbon nanotubes applied in the field emission devices

2013 ◽  
Vol 56 (11) ◽  
pp. 2081-2084 ◽  
Author(s):  
DeTian Li ◽  
YongJun Cheng ◽  
Min Cai ◽  
JinLi Yao ◽  
Peng Chang
Keyword(s):  
Carbon Nanotubes ◽  
Field Emission ◽  
Field Emission Devices
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