Fabrication of Graphene-Inserted Tunneling Device (GiTD) for Emerging Spin Devices

2020 ◽  
Vol 98 (3) ◽  
pp. 3-13
Author(s):  
Hebin Roy Cherian ◽  
Norman Birge ◽  
Johannes Pollanen ◽  
Ethan C Ahn
Keyword(s):  
Spin Devices

scholarly journals Organic spintronics

2011 ◽  
Vol 369 (1948) ◽  
pp. 3054-3068 ◽  
Author(s):  
I. Bergenti ◽  
V. Dediu ◽  
M. Prezioso ◽  
A. Riminucci
Keyword(s):  
Organic Semiconductors ◽  
Spin Transport ◽  
Tunnel Barrier ◽  
Organic Spintronics ◽  
Open Questions ◽  
Spin Polarized ◽  
Basic Concepts ◽  
Functional Operation ◽  
Spin Devices

Organic semiconductors are emerging materials in the field of spintronics. Successful achievements include their use as a tunnel barrier in magnetoresistive tunnelling devices and as a medium for spin-polarized current in transport devices. In this paper, we give an overview of the basic concepts of spin transport in organic semiconductors and present the results obtained in the field, highlighting the open questions that have to be addressed in order to improve devices performance and reproducibility. The most challenging perspectives will be discussed and a possible evolution of organic spin devices featuring multi-functional operation is presented.

MOLECULAR SPIN DEVICES: CURRENT UNDERSTANDING AND NEW TERRITORIES

NANO ◽  
2009 ◽  
Vol 04 (06) ◽  
pp. 325-338 ◽  
Author(s):  
PAWAN TYAGI
Keyword(s):  
Experimental Studies ◽  
Molecular Clusters ◽  
Molecular Magnets ◽  
Device Physics ◽  
Promising Candidate ◽  
Future Directions ◽  
Target Molecules ◽  
Molecular Spin ◽  
Spin Scattering ◽  
Spin Devices

Molecular spin devices (MSDs) are the most promising candidate for futuristic quantum computation, having potential to resolve spin scattering issue which compromise the utility of conventional spin devices. The MSDs have been extensively reviewed from the view points of device physics and the application of target molecules, such as single molecular magnets. Fabrication of a competent MSD still remains an intractable task. In this review, we first describe the experimental studies where spin state of molecule and/or electrode affected the device transport, especially under magnetic field. Then, we correlated the number of theoretical and experimental results from various domains of nanomagnetism to highlight the scope and future directions panoramically. Finally, the key designs of various MSDs, including our recently developed multilayer edge molecular electrode, have been discussed. A multilayer edge molecular electrode, prepared by bridging the molecular clusters on the exposed edges of a customized ferromagnet–insulator–ferromagnet junction, can be a promising platform for testing the variety of molecular magnets.

Energy-Efficient Multiferroic Spin-Devices and Spin-Circuits

SPIN ◽  
2020 ◽  
Vol 10 (04) ◽  
pp. 2030001
Author(s):  
Kuntal Roy
Keyword(s):  
Energy Efficient ◽  
Large Scale ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Current ◽  
Logic Gates ◽  
Low Energy ◽  
Circuit Representation ◽  
Spin Diffusion Length ◽  
Spin Devices

Spin-devices are switched by flipping spins without moving charge in space and this can lead to ultra-low-energy switching replacing traditional transistors in beyond Moore’s law era. In particular, the electric field-induced magnetization switching has emerged to be an energy-efficient paradigm. Here, we review the recent developments on ultra-low-energy, area-efficient, and fast spin-devices using multiferroic magnetoelectric composites. It is shown that both digital logic gates and analog computing with transistor-like high-gain region in the input-output characteristics of multiferroic composites are feasible. We also review the equivalent spin-circuit representation of spin-devices by considering spin potential and spin current similar to the charge-based counterparts using Kirchhoff’s voltage/current laws, which is necessary for the development of large-scale circuits. We review the spin-circuit representation of spin pumping, which happens anyway when there is a material adjacent to a rotating magnetization and therefore it is particularly necessary to be incorporated in device modeling. Such representation is also useful for understanding and proposing experiments. In spin-circuit representation, spin diffusion length is an important parameter and it is shown that a thickness-dependent spin diffusion length reflecting Elliott–Yafet spin relaxation mechanism in platinum is necessary to match the experimental results.

The defect impacts of zigzag SiC nanoribbons in the spin devices

2020 ◽  
Vol 384 (34) ◽  
pp. 126852
Author(s):  
Yuhong Zhou ◽  
Xia Zhuge ◽  
Kan Luo ◽  
Peng An ◽  
Shiyu Du
Keyword(s):  
Spin Devices

MOS-Based Spin Devices for Reconfigurable Logic

2007 ◽  
Vol 54 (5) ◽  
pp. 961-976 ◽  
Author(s):  
Masaaki Tanaka ◽  
Satoshi Sugahara
Keyword(s):  
Reconfigurable Logic ◽  
Spin Devices
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