Model for Dislocation Pinning Interactions in Ingaas/GaAs (001) Heterostructures

2019 ◽  
Vol 92 (6) ◽  
pp. 43-55
Author(s):  
Tedi Kujofsa ◽  
John E Ayers
Keyword(s):  
2012 ◽  
Vol 2012.25 (0) ◽  
pp. 416-418
Author(s):  
Keisuke KINOSHITA ◽  
Tomotsugu SHIMOKAWA ◽  
Lina WAKAKO ◽  
Toshiyasu KINARI

1986 ◽  
Vol 20 (3) ◽  
pp. 427-432 ◽  
Author(s):  
J. Lauzier ◽  
J. Hillairet ◽  
G. Funk ◽  
H. Schultz

2015 ◽  
Vol 363 ◽  
pp. 106-111
Author(s):  
Shigeru Suzuki ◽  
Alfred Seeger

Dislocation-induced relaxations in different molybdenum single crystals were investigated by means of low-frequency internal friction measurements in the temperature range of 20–600 K. The results indicated that the appearance of the dislocation-induced relaxations strongly depends on the purity of the molybdenum, although the intrinsic dislocation relaxations appeared at about 100 K and 450 K in the high-purity molybdenum. The molybdenum containing a small amount of carbon did not exhibit the intrinsic dislocation relaxations but rather revealed a modulus increase due to the dislocation pinning caused by the dissolved carbon. When the molybdenum containing a small amount of carbon was annealed up to 700 K, a new relaxation peak appeared at about 450 K. The activation process for this relaxation indicated that it could be attributed to the relaxation due to a carbon-dislocation interaction. In addition, it was shown that the dislocation-induced relaxations in medium-purity molybdenum were small, which was attributed to the residual substitutional impurities in the molybdenum.


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