scholarly journals Gate-Defined Quantum Dots in Ge/SiGe Quantum Wells as a Platform for Spin Qubits

2019 ◽  
Vol 92 (1) ◽  
pp. 17-25
Author(s):  
Will J Hardy ◽  
Yi-Hsin Su ◽  
Yen Chuang ◽  
Leon N Maurer ◽  
Mitchell Brickson ◽  
...  
2019 ◽  
Vol 30 (21) ◽  
pp. 215202 ◽  
Author(s):  
Will J Hardy ◽  
C Thomas Harris ◽  
Yi-Hsin Su ◽  
Yen Chuang ◽  
Jonathan Moussa ◽  
...  

1990 ◽  
Vol 216 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
S. N. Biswas

ABSTRACTIn this paper we studied the thermoelectric power under classically large magnetic field (TPM) in quantum wells (QWs), quantum well wires (QWWS) and quantum dots (QDs) of Bi by formulating the respective electron dispersion laws. The TPM increases with increasing film thickness in an oscillatory manner in all the cases. The TPM in QD is greatest and the least for quantum wells respectively. The theoretical results are in agreement with the experimental observations as reported elsewhere.


2004 ◽  
Vol 3 (1-5) ◽  
pp. 115-132 ◽  
Author(s):  
Hans-Andreas Engel ◽  
L. P. Kouwenhoven ◽  
Daniel Loss ◽  
C. M. Marcus
Keyword(s):  

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