Calculation of Ohmic Resistance Increase Induced by Phase Transformation of Zirconia Electrolyte in SOFC Cell by Raman Spectroscopy

2019 ◽  
Vol 91 (1) ◽  
pp. 809-813
Author(s):  
Tomohiro Ishiyama ◽  
Haruo Kishimoto ◽  
Katsuhiko Yamaji ◽  
Teruhisa Horita ◽  
Harumi Yokokawa
2003 ◽  
Vol 795 ◽  
Author(s):  
Jae-il Jang ◽  
Songqing Wen ◽  
M. J. Lance ◽  
I. M. Anderson ◽  
G. M. Pharr

ABSTRACTNanoindentation experiments were performed on single crystals of (100) Si using a series of triangular pyramidal indenters with centerline-to-face angles in the range 35.3° to 85.0°. The influences of the indenter geometry on cracking and phase transformation during indentation were systematically studied. Although reducing the indenter angle reduces the threshold load for cracking and increases the crack lengths, c, at a given indention load, P, the frequently observed relation between P and c3/2 is maintained for all of the indenters over a wide range of load. Features in the nanoindentation load-displacement curves in conjunction with Raman spectroscopy of the crystalline and amorphous phases in and around the contact impression show that the indenter geometry also plays a role in the phase transformation behavior. Results are discussed in relation to prevailing ideas about indentation cracking and phase transformation in silicon.


2010 ◽  
Vol 107 (1) ◽  
pp. 013517 ◽  
Author(s):  
Tetsuji Kume ◽  
Satoshi Ohno ◽  
Shigeo Sasaki ◽  
Hiroyasu Shimizu ◽  
Yasuo Ohishi ◽  
...  

2014 ◽  
Vol 733 ◽  
pp. 6-19 ◽  
Author(s):  
Prasant Kumar Nayak ◽  
Judith Grinblat ◽  
Mikhael Levi ◽  
Yan Wu ◽  
Bob Powell ◽  
...  

1997 ◽  
Vol 297 (1-2) ◽  
pp. 85-92 ◽  
Author(s):  
Pei Jane Huang ◽  
Hua Chang ◽  
Chuin Tih Yeh ◽  
Ching Wen Tsai

Sign in / Sign up

Export Citation Format

Share Document