(Invited) Catalytic Chemical Vapor Deposition Technology for Low Temperature Processing of Thin Film Transistors

2018 ◽  
Vol 86 (11) ◽  
pp. 73-77
Author(s):  
Wan-Shick Hong
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Catalytic Chemical Vapor Deposition ◽  
Low Temperature Processing ◽  
Deposition Technology

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

Poly-SiGe TFTs Fabricated by Low Temperature Chemical Vapor Deposition at 450°C

2001 ◽  
Vol 686 ◽  
Author(s):  
Kousaku Shimizu ◽  
Jianjun Zhang ◽  
Jeong-woo Lee ◽  
Jun-ichi Hanna
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Polycrystalline Materials ◽  
Si Substrates ◽  
Vapor Deposition Technique

AbstractLow temperature growth of poly-SiGe has been investigated by reactive thermal chemical vapor deposition technique, which is a newly developed technique for preparing polycrystalline materials with using redox reactions in a set of source materials, Si2H6 and GeF4.. In order to prepare high uniformity and reproducibility of Si-rich poly-SiGe, total pressure, gas flow ratio, and residence time are optimized at 450°C of substrate temperature. Through optimizing the conditions, poly-Si1−xGex (x<0.04) films have been prepared in the reproducibility more than 90% and uniformity more than 88%. Bottom gate type of n-channel thin film transistors has been fabricated in various grain size of poly-Si1−xGex on SiO2 (100nm)/Si substrates. 5-36 cm2/Vs of field effect mobility of thin film transistors (L/W = 50μm/50μm) have been achieved after hydrogenation, whose threshold voltage is around 2±0.5V, and on/off ratio is more than 104.

Thin-film transistors deposited by hot-wire chemical vapor deposition

2003 ◽  
Vol 430 (1-2) ◽  
pp. 220-225 ◽  
Author(s):  
B. Stannowski ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Hot Wire
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