Boosting Ge-Epi P-Well Mobility & Crystal Quality with Si or Sn Implantation and Melt Annealing

2018 ◽  
Vol 86 (7) ◽  
pp. 357-372 ◽  
Author(s):  
John O Borland ◽  
Shang-Shuin Chaung ◽  
Tseung-Yuen Tseng ◽  
Abhijeet Joshi ◽  
Bulent Basol ◽  
...  
Keyword(s):  
Crystal Quality ◽  
Melt Annealing

Relation of Heat Transfer with the Growth Rate of InSb based Bulk Crystals Grown by VDS and its Effect on the Crystal Quality

2020 ◽  
Vol 12 (2) ◽  
pp. 02012-1-02012-5
Author(s):  
Dilip Maske ◽  
◽  
Manisha Deshpande ◽  
Dattatray Gadkari ◽  
◽  
...  
Keyword(s):  
Heat Transfer ◽  
Growth Rate ◽  
Crystal Quality ◽  
Bulk Crystals

scholarly journals In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 126
Author(s):  
Abdul Kareem K. Soopy ◽  
Zhaonan Li ◽  
Tianyi Tang ◽  
Jiaqian Sun ◽  
Bo Xu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Gas Sensors ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Crystal Quality ◽  
Porous Structures ◽  
Light Emitting ◽  
Photochemical Etching ◽  
Recent Advances ◽  
Low Dimensional

This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.

The Influence of Bi2O3 on SiO2-Al2O3-B2O3-RO Glass Propertiesarts

2014 ◽  
Vol 887-888 ◽  
pp. 86-89
Author(s):  
Ying Liang Tian ◽  
Jing Zhang ◽  
Shi Bing Sun ◽  
Ji Ye Fan
Keyword(s):  
Electrical Resistivity ◽  
High Temperature ◽  
Expansion Coefficient ◽  
Bismuth Oxide ◽  
Sintering Temperature ◽  
Oxide Content ◽  
Basic Composition ◽  
Wide Range ◽  
Melt Annealing ◽  
Annealing Method

In the paper, regarded SiO2-Al2O3-B2O3-RO system as basic composition, high-temperature glass glaze was prepared successfully by using Bi2O3 in place of Al2O3, and traditional melt annealing method was adopted .The influence of Bi2O3 on expansion coefficient, sintering temperature, electrical resistivity was investigated by DIL-2008, SJY sintering imager, Keythley2410. The results show that the sintering temperature of glass glaze has a wide range, which can reach 270°C, so it is easy to sinter; with the increasing of bismuth oxide content, expansion coefficient of glass glaze gradually increases, whereas sintering temperature and electrical resistivity continuously decreases.

scholarly journals Improvement of crystal quality by time controlled annealing

2005 ◽  
Vol 61 (a1) ◽  
pp. c9-c9
Author(s):  
V. Stojanoff ◽  
A. Vahedi-Faridi ◽  
J. I. Yeh
Keyword(s):  
Crystal Quality

Crystal Quality Effect on Low-Frequency Noise in ZnO TFTs

2011 ◽  
Vol 32 (12) ◽  
pp. 1701-1703 ◽  
Author(s):  
Kwang-Seok Jeong ◽  
Yu-Mi Kim ◽  
Ho-Jin Yun ◽  
Seung-Dong Yang ◽  
Young-Su Kim ◽  
...  
Keyword(s):  
Low Frequency ◽  
Crystal Quality ◽  
Frequency Noise ◽  
Low Frequency Noise
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