(Invited) Molecular Dynamics of Dipole Layer Formation at High-k/SiO2Interface

2017 ◽  
Vol 80 (1) ◽  
pp. 313-325 ◽  
Author(s):  
Takanobu Watanabe
Keyword(s):  
Molecular Dynamics ◽  
Layer Formation ◽  
Dipole Layer ◽  
High K

Positive and negative dipole layer formation at high-k/SiO2interfaces simulated by classical molecular dynamics

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EB03 ◽  
Author(s):  
Kosuke Shimura ◽  
Ryota Kunugi ◽  
Atsushi Ogura ◽  
Shinichi Satoh ◽  
Jiayang Fei ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Layer Formation ◽  
Classical Molecular Dynamics ◽  
Dipole Layer ◽  
High K

(Invited) Molecular Dynamics Simulation of Dipole Layer Formation at High-k/SiO2 Interfaces

2014 ◽  
Vol 64 (8) ◽  
pp. 3-15 ◽  
Author(s):  
T. Watanabe ◽  
R. Kuriyama ◽  
M. Hashiguchi ◽  
R. Takahashi ◽  
K. Shimura ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Dynamics Simulation ◽  
Layer Formation ◽  
Dipole Layer ◽  
High K

Counter Dipole Layer Formation in Multilayer High-$k$ Gate Stacks

2012 ◽  
Vol 51 ◽  
pp. 081303 ◽  
Author(s):  
Shinya Hibino ◽  
Tomonori Nishimura ◽  
Kosuke Nagashio ◽  
Koji Kita ◽  
Akira Toriumi
Keyword(s):  
Layer Formation ◽  
Gate Stacks ◽  
Dipole Layer ◽  
High K

Counter dipole layer formation in SiO2/high-k/SiO2/Si gate stacks

2012 ◽  
Author(s):  
S. Hibino ◽  
T. Nishimura ◽  
K. Nagashio ◽  
K. Kita ◽  
A. Toriumi
Keyword(s):  
Layer Formation ◽  
Gate Stacks ◽  
Dipole Layer ◽  
High K

Molecular dynamics study on the formation of dipole layer at high-k/SiO2interfaces

2014 ◽  
Vol 53 (8S1) ◽  
pp. 08LB02 ◽  
Author(s):  
Ryo Kuriyama ◽  
Masahiro Hashiguchi ◽  
Ryusuke Takahashi ◽  
Kosuke Shimura ◽  
Atsushi Ogura ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Dipole Layer ◽  
High K

Inherent Dipole Layer Formation Driven by Surface Energy at Nonplanar Dielectric Interface

2020 ◽  
pp. 1-5
Author(s):  
Yu Fang ◽  
Wen-Jay Lee ◽  
An-Chen Yang ◽  
Guan-Peng Chen ◽  
Nan-Yow Chen ◽  
...  
Keyword(s):  
Surface Energy ◽  
Layer Formation ◽  
Dielectric Interface ◽  
Dipole Layer

High quality interfacial layer formation for Si0.75Ge0.25 (100) high-k metal gate stack

2020 ◽  
Vol 223 ◽  
pp. 111219 ◽  
Author(s):  
S. Siddiqui ◽  
R. Galatage ◽  
W. Zhao ◽  
G. Raja Muthinti ◽  
J. Fronheiser ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Layer Formation ◽  
Metal Gate ◽  
Gate Stack ◽  
High Quality ◽  
High K
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