Magnetic Conductive Filament Formed in the ReRAM Device with Ferromagnetic Electrode

Abstract Failures in printed circuit boards account for a significant percentage of field returns in electronic products and systems. Conductive filament formation is an electrochemical process that requires the transport of a metal through or across a nonmetallic medium under the influence of an applied electric field. With the advent of lead-free initiatives, boards are being exposed to higher temperatures during lead-free solder processing. This can weaken the glass-fiber bonding, thus enhancing conductive filament formation. The effect of the inclusion of halogen-free flame retardants on conductive filament formation in printed circuit boards is also not completely understood. Previous studies, along with analysis and examinations conducted on printed circuit boards with failure sites that were due to conductive filament formation, have shown that the conductive path is typically formed along the delaminated fiber glass and epoxy resin interfaces. This paper is a result of a year-long study on the effects of reflow temperatures, halogen-free flame retardants, glass reinforcement weave style, and conductor spacing on times to failure due to conductive filament formation.

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Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

Journal of Nano- and Electronic Physics ◽

10.21272/jnep.12(2).02008 ◽

2020 ◽

Vol 12 (2) ◽

pp. 02008-1-02008-4

Author(s):

Pramod J. Patil ◽

◽

Namita A. Ahir ◽

Suhas Yadav ◽

Chetan C. Revadekar ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Memory Devices ◽

Access Memory ◽

Conductive Filament ◽

Filament Temperature

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Conductive Filament Variation of RRAM and Its Impact on Single Event Upset

Transactions on Electrical and Electronic Materials ◽

10.1007/s42341-021-00343-y ◽

2021 ◽

Author(s):

H. M. Vijay ◽

V. N. Ramakrishnan

Keyword(s):

Single Event Upset ◽

Single Event ◽

Conductive Filament

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Multi‐Level Control of Conductive Filament Evolution and Enhanced Resistance Controllability of the Cu‐Cone Structure Embedded Conductive Bridge Random Access Memory

Advanced Electronic Materials ◽

10.1002/aelm.202100209 ◽

2021 ◽

pp. 2100209

Author(s):

Hae Jin Kim ◽

Jihun Kim ◽

Tae Gyun Park ◽

Jung Ho Yoon ◽

Cheol Seong Hwang

Keyword(s):

Random Access ◽

Random Access Memory ◽

Level Control ◽

Access Memory ◽

Conductive Filament ◽

Cone Structure ◽

Enhanced Resistance ◽

Conductive Bridge ◽

Multi Level

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Structural Analysis and Performance in a Dual‐Mechanism Conductive Filament Memristor

Advanced Electronic Materials ◽

10.1002/aelm.202100605 ◽

2021 ◽

pp. 2100605

Author(s):

Shu‐Chin Tsai ◽

Hong‐Yang Lo ◽

Chih‐Yang Huang ◽

Min‐Ci Wu ◽

Yi‐Tang Tseng ◽

...

Keyword(s):

Structural Analysis ◽

Conductive Filament ◽

And Performance ◽

Dual Mechanism

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MAGNETORESISTANCE IN Fe/MgO/Fe MAGNETIC TUNNEL JUNCTIONS

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156407004795 ◽

2007 ◽

Vol 17 (03) ◽

pp. 593-598 ◽

Cited By ~ 1

Author(s):

N. N. BELETSKII ◽

S. A. BORYSENKO ◽

V. M. YAKOVENKO ◽

G. P. BERMAN ◽

S. A. WOLF

Keyword(s):

Current Density ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunneling Magnetoresistance ◽

Electron Current ◽

Ferromagnetic Electrode ◽

Electron Current Density

The magnetoresistance of Fe/MgO/Fe magnetic tunnel junctions (MTJs) was studied taking into consideration image forces. For MTJs with an MgO insulator, explanations are given of the giant tunneling magnetoresistance (TMR) effect and the effect of the increasing TMR with an increase in MgO insulator thickness. It is demonstrated that the electron current density through MTJs can be high enough to switch the magnetization of a ferromagnetic electrode.

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Experimental and Theoretical Investigation of Minimization of Forming-Induced Variability in Resistive Memory Devices

MRS Proceedings ◽

10.1557/opl.2015.83 ◽

2015 ◽

Vol 1729 ◽

pp. 53-58

Author(s):

Brian L. Geist ◽

Dmitri Strukov ◽

Vladimir Kochergin

Keyword(s):

Metal Oxide ◽

Diffusion Processes ◽

Memory Device ◽

Device Fabrication ◽

Oxide Material ◽

Memory Devices ◽

Resistive Memory ◽

Conductive Filament ◽

Metal Metal ◽

Metal Oxide Layer

ABSTRACTResistive memory materials and devices (often called memristors) are an area of intense research, with metal/metal oxide/metal resistive elements a prominent example of such devices. Electroforming (the formation of a conductive filament in the metal oxide layer) represents one of the often necessary steps of resistive memory device fabrication that results in large and poorly controlled variability in device performance. In this contribution we present a numerical investigation of the electroforming process. In our model, drift and Ficks and Soret diffusion processes are responsible for movement of vacancies in the oxide material. Simulations predict filament formation and qualitatively agreed with a reduction of the forming voltage in structures with a top electrode. The forming and switching results of the study are compared with numerical simulations and show a possible pathway toward more repeatable and controllable resistive memory devices.

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