Influence of Passivation Layers on Characteristics of High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistors

2016 ◽  
Vol 75 (10) ◽  
pp. 163-168 ◽  
Author(s):  
P.-T. Liu ◽  
C.-H. Chang ◽  
G.-T. Zheng ◽  
C.-C. Chang
2014 ◽  
Vol 45 (1) ◽  
pp. 1017-1020 ◽  
Author(s):  
Chur-Shyang Fuh ◽  
Po-Tsun Liu ◽  
Yang-Shun Fan ◽  
Chih-Hsiang Chang ◽  
Che-Chia Chang

2009 ◽  
Vol 19 (20) ◽  
pp. 3135 ◽  
Author(s):  
Doo-Hyoung Lee ◽  
Seung-Yeol Han ◽  
Gregory S. Herman ◽  
Chih-hung Chang

2014 ◽  
Vol 45 (1) ◽  
pp. 473-475 ◽  
Author(s):  
Sung Haeng Cho ◽  
Sang-Hee Ko Park ◽  
Chi-Sun Hwang ◽  
Min Ki Ryu ◽  
In Yong Eom ◽  
...  

2016 ◽  
Vol 59 (9) ◽  
pp. 1407-1412 ◽  
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YunGe Zhang ◽  
GenMao Huang ◽  
Lian Duan ◽  
GuiFang Dong ◽  
DeQiang Zhang ◽  
...  

RSC Advances ◽  
2016 ◽  
Vol 6 (108) ◽  
pp. 106374-106379 ◽  
Author(s):  
Po-Tsun Liu ◽  
Chih-Hsiang Chang ◽  
Chur-Shyang Fuh

The influence of a backchannel passivation layer on the ambient stability of amorphous indium-zinc-tin-oxide thin-film transistors was studied. The ALD Al2O3 films and plasma-enhanced chemical vapor deposited SiO2 films were separately used as channel passivation layers.


2018 ◽  
Vol 4 (7) ◽  
pp. 1800032 ◽  
Author(s):  
Cristina Fernandes ◽  
Ana Santa ◽  
Ângelo Santos ◽  
Pydi Bahubalindruni ◽  
Jonas Deuermeier ◽  
...  

2017 ◽  
Vol 13 (5) ◽  
pp. 406-411 ◽  
Author(s):  
Sang Tae Kim ◽  
Yeonwoo Shin ◽  
Pil Sang Yun ◽  
Jong Uk Bae ◽  
In Jae Chung ◽  
...  

2019 ◽  
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Bong-Jin Kim ◽  
Hyung-Jun Kim ◽  
Sung Mok Jung ◽  
Tae-Sik Yoon ◽  
Yong-Sang Kim ◽  
...  

2013 ◽  
Vol 62 (8) ◽  
pp. 1176-1182 ◽  
Author(s):  
Jong Hoon Lee ◽  
Chang Hoi Kim ◽  
Hong Seung Kim ◽  
Jae Hoon Park ◽  
Jin Hwa Ryu ◽  
...  

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