Optimized Novel Indium Antimonide Quantum Well Field Effect Transistor for High-Speed and Low Power Logic Applications

2015 ◽  
Vol 69 (5) ◽  
pp. 3-8 ◽  
Author(s):  
R. Islam ◽  
M. M. Uddin ◽  
M. A. Matin
Keyword(s):  
Quantum Well ◽  
Low Power ◽  
Indium Antimonide ◽  
Field Effect ◽  
High Speed ◽  
Field Effect Transistor ◽  
Well Field ◽  
Effect Transistor ◽  
Low Power Logic

scholarly journals Design and Performance Analysis of Depletion-Mode InSb Quantum-Well Field-Effect Transistor for Logic Applications

2017 ◽  
Vol 05 (02) ◽  
pp. 1750006 ◽  
Author(s):  
R. Islam ◽  
M. M. Uddin ◽  
M. Mofazzal Hossain ◽  
M. A. Matin
Keyword(s):  
Quantum Well ◽  
Field Effect ◽  
High Speed ◽  
Field Effect Transistor ◽  
Short Circuit ◽  
Current Gain ◽  
Potential Candidate ◽  
High Electron ◽  
Well Field ◽  
Effect Transistor

The design of a 1[Formula: see text][Formula: see text]m gate length depletion-mode InSb quantum-well field-effect transistor (QWFET) with a 10[Formula: see text]nm-thick Al2O3 gate dielectric has been optimized using a quantum corrected self-consistent Schrödinger-Poisson (QCSP) and two-dimensional drift-diffusion model. The model predicts a very high electron mobility of 4.42[Formula: see text]m2V[Formula: see text]s[Formula: see text] at [Formula: see text][Formula: see text]V, a small pinch off gate voltage ([Formula: see text]) of [Formula: see text]0.25[Formula: see text]V, a maximum extrinsic transconductance ([Formula: see text]) of [Formula: see text][Formula: see text]4.85[Formula: see text]mS/[Formula: see text]m and a drain current density of more than 3.34[Formula: see text]mA/[Formula: see text]m. A short-circuit current-gain cut-off frequency ([Formula: see text]) of 374[Formula: see text]GHz and a maximum oscillation frequency ([Formula: see text]) of 645[Formula: see text]GHz are predicted for the device. These characteristics make the device a potential candidate for low power, high-speed logic electronic device applications.

Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor

2003 ◽  
Vol 94 (5) ◽  
pp. 3556-3562 ◽  
Author(s):  
V. V. Popov ◽  
O. V. Polischuk ◽  
T. V. Teperik ◽  
X. G. Peralta ◽  
S. J. Allen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Terahertz Radiation ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Double Quantum ◽  
Double Quantum Well ◽  
Well Field ◽  
Effect Transistor ◽  
Plasmon Modes

Schottky barrier transport in InSb/AlInSb quantum well field effect transistor structures

2006 ◽  
Vol 21 (10) ◽  
pp. 1408-1411 ◽  
Author(s):  
J M S Orr ◽  
P D Buckle ◽  
M Fearn ◽  
P J Wilding ◽  
C J Bartlett ◽  
...  
Keyword(s):  
Quantum Well ◽  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Well Field ◽  
Effect Transistor

A composite quantum well field‐effect transistor

1996 ◽  
Vol 69 (1) ◽  
pp. 85-87 ◽  
Author(s):  
M. J. Yang ◽  
Fu‐Cheng Wang ◽  
C. H. Yang ◽  
B. R. Bennett ◽  
T. Q. Do
Keyword(s):  
Quantum Well ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Well Field ◽  
Effect Transistor
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