Atomic Layer Deposition of i-Sb2S3/p-NiO Thin Layers into Anodic Alumina Membranes for Photoelectrochemical Water Splitting

2015 ◽  
Vol 66 (6) ◽  
pp. 119-126 ◽  
Author(s):  
M. Barr ◽  
L. Assaud ◽  
Y. Wu ◽  
J. Bachmann ◽  
L. Santinacci
Keyword(s):  
Atomic Layer Deposition ◽  
Water Splitting ◽  
Atomic Layer ◽  
Anodic Alumina ◽  
Thin Layers ◽  
Photoelectrochemical Water Splitting ◽  
Alumina Membranes ◽  
Layer Deposition

One-Dimensional TiO2@GaON Core-Shell Nanowires with Controlled Shell Thickness from Atomic Layer Deposition for Stable and Efficient Photoelectrochemical Water Splitting

2019 ◽  
Author(s):  
Jiajia Tao ◽  
Hong-Ping Ma ◽  
Kaiping Yuan ◽  
Yang Gu ◽  
Jianwei Lian ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Water Splitting ◽  
Atomic Layer ◽  
Photoelectrochemical Water Splitting ◽  
Core Shell ◽  
Photoelectrochemical Performance ◽  
Highly Efficient ◽  
Layer Deposition ◽  
Shell Nanowires

<div>As a promising oxygen evolution reaction semiconductor, TiO2 has been extensively investigated for solar photoelectrochemical water splitting. Here, a highly efficient and stable strategy for rationally preparing GaON cocatalysts on TiO2 by atomic layer deposition is demonstrated, which we show significantly enhances the</div><div>photoelectrochemical performance compared to TiO2-based photoanodes. For TiO2@20 nm-GaON core-shell nanowires a photocurrent density up to 1.10 mA cm-2 (1.23 V vs RHE) under AM 1.5 G irradiation (100 mW cm-2) has been achieved, which is 14 times higher than that of TiO2 NWs. Furthermore, the oxygen vacancy formation on GaON as well as the band gap matching with TiO2 not only provides more active sites for water oxidation but also enhances light absorption to promote interfacial charge separation and migration. Density functional theory studies of model systems of GaON-modified TiO2 confirm the band gap reduction, high reducibility and ability to activate water. The highly efficient and stable systems of TiO2@GaON core-shell nanowires provide a deeper understanding and universal strategy for enhancing photoelectrochemical performance of photoanodes now available. </div>

Improving Hematite-based Photoelectrochemical Water Splitting with Ultrathin TiO2 by Atomic Layer Deposition

2014 ◽  
Vol 6 (15) ◽  
pp. 12005-12011 ◽  
Author(s):  
Xiaogang Yang ◽  
Rui Liu ◽  
Chun Du ◽  
Pengcheng Dai ◽  
Zhi Zheng ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Water Splitting ◽  
Atomic Layer ◽  
Photoelectrochemical Water Splitting ◽  
Layer Deposition

scholarly journals Tantalum nitride films integrated with transparent conductive oxide substrates via atomic layer deposition for photoelectrochemical water splitting

2016 ◽  
Vol 7 (11) ◽  
pp. 6760-6767 ◽  
Author(s):  
Hamed Hajibabaei ◽  
Omid Zandi ◽  
Thomas W. Hamann
Keyword(s):  
Atomic Layer Deposition ◽  
Water Splitting ◽  
Atomic Layer ◽  
Transparent Conductive Oxide ◽  
Photoelectrochemical Water Splitting ◽  
Tantalum Nitride ◽  
Solar Water Splitting ◽  
Layer Deposition ◽  
Oxide Substrates ◽  
Conductive Oxide

The first example of tantalum nitride electrodes on transparent conductive oxide substrates, which enables solar water splitting, is presented.

One-Dimensional TiO2@GaON Core-Shell Nanowires with Controlled Shell Thickness from Atomic Layer Deposition for Stable and Efficient Photoelectrochemical Water Splitting

2019 ◽  
Author(s):  
Jiajia Tao ◽  
Hong-Ping Ma ◽  
Kaiping Yuan ◽  
Yang Gu ◽  
Jianwei Lian ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Water Splitting ◽  
Atomic Layer ◽  
Photoelectrochemical Water Splitting ◽  
Core Shell ◽  
Photoelectrochemical Performance ◽  
Highly Efficient ◽  
Layer Deposition ◽  
Shell Nanowires

<div>As a promising oxygen evolution reaction semiconductor, TiO2 has been extensively investigated for solar photoelectrochemical water splitting. Here, a highly efficient and stable strategy for rationally preparing GaON cocatalysts on TiO2 by atomic layer deposition is demonstrated, which we show significantly enhances the</div><div>photoelectrochemical performance compared to TiO2-based photoanodes. For TiO2@20 nm-GaON core-shell nanowires a photocurrent density up to 1.10 mA cm-2 (1.23 V vs RHE) under AM 1.5 G irradiation (100 mW cm-2) has been achieved, which is 14 times higher than that of TiO2 NWs. Furthermore, the oxygen vacancy formation on GaON as well as the band gap matching with TiO2 not only provides more active sites for water oxidation but also enhances light absorption to promote interfacial charge separation and migration. Density functional theory studies of model systems of GaON-modified TiO2 confirm the band gap reduction, high reducibility and ability to activate water. The highly efficient and stable systems of TiO2@GaON core-shell nanowires provide a deeper understanding and universal strategy for enhancing photoelectrochemical performance of photoanodes now available. </div>

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