Room-Temperature Wafer Direct Bonding Using Ne-Beam Surface-Activation

2014 ◽  
Vol 64 (5) ◽  
pp. 69-75 ◽  
Author(s):  
H. Takagi ◽  
Y. Kurashima ◽  
A. Maeda
Keyword(s):  
Room Temperature ◽  
Surface Activation ◽  
Beam Surface ◽  
Wafer Direct Bonding

Room temperature GaN-GaAs direct bonding by argon-beam surface activation

2007 ◽  
Author(s):  
Eiji Higurashi ◽  
Yuichiro Tokuda ◽  
Masatake Akaike ◽  
Tadatomo Suga
Keyword(s):  
Room Temperature ◽  
Surface Activation ◽  
Beam Surface

Effect of Surface Roughness on Room-Temperature Wafer Bonding by Ar Beam Surface Activation

1998 ◽  
Vol 37 (Part 1, No. 7A) ◽  
pp. 4197-4203 ◽  
Author(s):  
Hideki Takagi ◽  
Ryutaro Maeda ◽  
Teak Ryong Chung ◽  
Naoe Hosoda ◽  
Tadatomo Suga
Keyword(s):  
Surface Roughness ◽  
Wafer Bonding ◽  
Room Temperature ◽  
Surface Activation ◽  
Beam Surface ◽  
Effect Of Surface

Room temperature wafer direct bonding of smooth Si surfaces recovered by Ne beam surface treatments

2013 ◽  
Vol 102 (25) ◽  
pp. 251605 ◽  
Author(s):  
Yuichi Kurashima ◽  
Atsuhiko Maeda ◽  
Hideki Takagi
Keyword(s):  
Room Temperature ◽  
Surface Treatments ◽  
Beam Surface ◽  
Wafer Direct Bonding

Room-Temperature Bonding of Oxide Wafers by Ar-beam Surface Activation

2019 ◽  
Vol 16 (8) ◽  
pp. 531-537 ◽  
Author(s):  
Hideki Takagi ◽  
Jun Utsumi ◽  
Masaharu Takahashi ◽  
Ryutaro Maeda
Keyword(s):  
Room Temperature ◽  
Surface Activation ◽  
Beam Surface
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