Effect of Gamma Irradiation on DC Performance of Circular-Shaped AlGaN/GaN High Electron Mobility Transistors

2014 ◽  
Vol 61 (4) ◽  
pp. 205-210
Author(s):  
Y.-H. Hwang ◽  
Y.-L. Hsieh ◽  
L. Lei ◽  
S. Li ◽  
F. Ren ◽  
...  
Keyword(s):  
Gamma Irradiation ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Effects of Gamma Irradiation on AlGaN-Based High Electron Mobility Transistors

2017 ◽  
Vol 6 (11) ◽  
pp. S3063-S3066 ◽  
Author(s):  
Jonathan Lee ◽  
Elena Flitsiyan ◽  
Leonid Chernyak ◽  
Joseph Salzman ◽  
Boris Meyler
Keyword(s):  
Gamma Irradiation ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Impact of low dose gamma irradiation on electronic carrier transport in AlGaN/GaN High Electron Mobility Transistors

2015 ◽  
Vol 1792 ◽  
Author(s):  
Anupama Yadav ◽  
Elena Flitsiyan ◽  
Leonid Chernyak ◽  
Fan Ren ◽  
Stephen J. Pearton ◽  
...  
Keyword(s):  
Gamma Irradiation ◽  
Electron Mobility ◽  
Carrier Transport ◽  
Minority Carrier ◽  
High Electron Mobility Transistors ◽  
Electron Injection ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
The Impact

ABSTRACTAlGaN/GaN High Electron Mobility Transistors were exposed to 60Co gamma-irradiation to doses up to 300Gy. The impact of Compton- electron injection (due to gamma-irradiation) is studied through monitoring of minority carrier transport using Electron Beam Induced Current (EBIC) technique. Temperature dependent EBIC measurements were conducted on devices before and after exposure to the irradiation, which provide us with critical information on gamma-irradiation induced defects in the material. As a result of irradiation, minority carrier diffusion length increases significantly, with an accompanying decrease in the activation energy. This is consistent with the longer life time of minority carrier in the material’s valence band as a result of an internal electron injection and subsequent trapping of Compton electrons on neutral levels.

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