(Invited) Vertical Tunnel FETs Using III-V Nanowire/Si Heterojunctions

2014 ◽  
Vol 61 (3) ◽  
pp. 81-89 ◽  
Author(s):  
K. Tomioka ◽  
T. Fukui
Keyword(s):  
Tunnel Fets

Controlling the ambipolar current in ultrathin SOI tunnel FETs using the back-bias effect

2020 ◽  
Vol 19 (2) ◽  
pp. 658-667 ◽  
Author(s):  
Tripuresh Joshi ◽  
Balraj Singh ◽  
Yashvir Singh
Keyword(s):  
Bias Effect ◽  
Ambipolar Current ◽  
Tunnel Fets ◽  
Ultrathin Soi

VLS-grown silicon nanowires — Dopant deactivation and tunnel FETs

2010 ◽  
Author(s):  
M. T. Bjork ◽  
K. E. Moselund ◽  
H. Schmid ◽  
H. Ghoneim ◽  
S. Karg ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Tunnel Fets ◽  
Dopant Deactivation

Simulation study of nanowire tunnel FETs

2012 ◽  
Author(s):  
Andreas Schenk ◽  
Reto Rhyner ◽  
Mathieu Luisier ◽  
Cedric Bessire
Keyword(s):  
Simulation Study ◽  
Tunnel Fets

Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs

2016 ◽  
Author(s):  
Davide Cutaia ◽  
Heinz Schmid ◽  
Mattias Borg ◽  
Kirsten Moselund ◽  
Nicolas Bologna ◽  
...  
Keyword(s):  
Tunnel Fets
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