High Performance Gallium Nitride GAA Nanowire with 7nm Diameter for Ultralow-Power Logic Applications

2014 ◽  
Vol 60 (1) ◽  
pp. 1045-1050 ◽  
Author(s):  
A. K. T V ◽  
M.-C. Chen ◽  
G. Sheu ◽  
S.-M. Yang
Keyword(s):  
Gallium Nitride ◽  
High Performance ◽  
Ultralow Power

scholarly journals Gallium nitride catalyzed the direct hydrogenation of carbon dioxide to dimethyl ether as primary product

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Chang Liu ◽  
Jincan Kang ◽  
Zheng-Qing Huang ◽  
Yong-Hong Song ◽  
Yong-Shan Xiao ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Dimethyl Ether ◽  
High Performance ◽  
Density Functional ◽  
Value Added ◽  
Density Functional Theory Calculations ◽  
Product Distribution ◽  
Spectroscopic Studies ◽  
Direct Hydrogenation ◽  
Hydrogenation Of Co

AbstractThe selective hydrogenation of CO2 to value-added chemicals is attractive but still challenged by the high-performance catalyst. In this work, we report that gallium nitride (GaN) catalyzes the direct hydrogenation of CO2 to dimethyl ether (DME) with a CO-free selectivity of about 80%. The activity of GaN for the hydrogenation of CO2 is much higher than that for the hydrogenation of CO although the product distribution is very similar. The steady-state and transient experimental results, spectroscopic studies, and density functional theory calculations rigorously reveal that DME is produced as the primary product via the methyl and formate intermediates, which are formed over different planes of GaN with similar activation energies. This essentially differs from the traditional DME synthesis via the methanol intermediate over a hybrid catalyst. The present work offers a different catalyst capable of the direct hydrogenation of CO2 to DME and thus enriches the chemistry for CO2 transformations.

High performance, self-powered and thermally stable 200–750 nm spectral responsive gallium nitride (GaN) based broadband photodetectors

2021 ◽  
Vol 225 ◽  
pp. 111033
Author(s):  
Nanda Kumar Reddy Nallabala ◽  
Srinivas Godavarthi ◽  
Venkata Krishnaiah Kummara ◽  
Mohan Kumar Kesarla ◽  
C. Yuvaraj ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
High Performance ◽  
Thermally Stable ◽  
Self Powered

scholarly journals Flexible Gallium Nitride: Flexible Gallium Nitride for High-Performance, Strainable Radio-Frequency Devices (Adv. Mater. 47/2017)

2017 ◽  
Vol 29 (47) ◽  
pp. 1770338 ◽  
Author(s):  
Nicholas R. Glavin ◽  
Kelson D. Chabak ◽  
Eric R. Heller ◽  
Elizabeth A. Moore ◽  
Timothy A. Prusnick ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Radio Frequency ◽  
High Performance

Ultralow-power silicon photonic interconnect for high-performance computing systems

2010 ◽  
Author(s):  
GuoLiang Li ◽  
Xuezhe Zheng ◽  
Jon Lexau ◽  
Ying Luo ◽  
Hiren Thacker ◽  
...  
Keyword(s):  
High Performance Computing ◽  
High Performance ◽  
Computing Systems ◽  
Silicon Photonic ◽  
Ultralow Power ◽  
Performance Computing

scholarly journals Monolithic transistor switch for microwave radiometry

2021 ◽  
Vol 2086 (1) ◽  
pp. 012049
Author(s):  
V G Tikhomirov ◽  
Yu V Solov’ev ◽  
A G Gudkov ◽  
M K Popov ◽  
S V Chizhikov
Keyword(s):  
Gallium Nitride ◽  
High Performance ◽  
Microwave Signal ◽  
Manufacturing Technology ◽  
Microwave Radiometry ◽  
Diagnostic Equipment ◽  
Transistor Switch ◽  
Design And Manufacturing

Abstract Modern medical microwave diagnostic equipment requires the application of solutions related to the compactness of the developed devices and high performance. Ensuring these requirements is possible by using a modern semiconductor component base based on A3B5 compounds. One of the promising materials for this purpose is gallium nitride. The paper presents the design and manufacturing technology of one of the main control elements of the microwave signal in microwave radiothermometer - monolithic AlGaN/GaN/SiC HEMT SPDT transistor switch.

Package design and development of a low cost high temperature (250°C), high current (50+A), low inductance discrete power package for advanced Silicon Carbide (SiC) and Gallium Nitride (GaN) devices

2013 ◽  
Vol 2013 (1) ◽  
pp. 000592-000597
Author(s):  
B. McPherson ◽  
B. Passmore ◽  
P. Killeen ◽  
D. Martin ◽  
A. Barkley ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Gallium Nitride ◽  
High Temperature ◽  
Power Density ◽  
High Performance ◽  
Elevated Temperatures ◽  
Power Converter ◽  
System Level ◽  
High Current ◽  
Package Design

The demands for high-performance power electronics systems are rapidly surpassing the power density, efficiency, and reliability limitations defined by the intrinsic properties of silicon-based semiconductors. The advantages of post silicon materials, including Silicon Carbide (SiC) and Gallium Nitride (GaN), are numerous, including: high temperature operation, high voltage blocking capability, extremely fast switching, and superior energy efficiency. These advantages, however, are severely limited by conventional power packages, particularly at temperatures higher than 175°C and >100 kHz switching speeds. In this discussion, APEI, Inc. presents the design of a newly developed discrete package specifically intended for high performance, high current (>50A), rapid switching, and extended temperature (>250°C) wide band gap devices which are now readily available on the commercial market at voltages exceeding 1200V. Finite element analysis (FEA) results will be presented to illustrate the modeling process, design tradeoffs, and critical decisions fundamental to a high performance package design. A low profile design focuses on reducing parasitic impedances which hinder high speed switching. A notable increase in the switching speed and frequency reduces the size and volume of associated filtering components in a power converter. Operating at elevated temperatures reduces the requirements of the heat removal system, ultimately allowing for a substantial increase in the power density. Highlights of these packages include the flexibility to house a variety of device sizes and types, co-packaged antiparallel diodes, a terminal layout designed to allow rapid system configuration (for paralleling or creating half- and full-bridge topologies), and a novel wire bondless backside cooled construction for lateral GaN HEMT devices. Specific focus was placed on minimizing the cost of the materials and fabrication processes of the package components. The design of the package is discussed in detail. High temperature testing of a SiC assembly and electrical test results of a high frequency GaN based boost converter will be presented to demonstrate system level performance advantages.

Controlled growth of gallium nitride nanowires on silicon and their utility in high performance Ultraviolet‑A photodetectors

2021 ◽  
pp. 113189
Author(s):  
Sanjay Sankaranarayanan ◽  
Prabakaran Kandasamy ◽  
Ramesh Raju ◽  
Saravanan Gengan ◽  
Baskar Krishnan
Keyword(s):  
Gallium Nitride ◽  
High Performance ◽  
Controlled Growth ◽  
Ultraviolet A
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