Preparation of Substrates Intended for the Growth of Lower Threading Dislocation Densities within Nitride Based UV Multiple Quantum Wells

2013 ◽  
Vol 53 (2) ◽  
pp. 39-42 ◽  
Author(s):  
M. A. Conroy ◽  
N. Petkov ◽  
H. N. Li ◽  
T. C. Sadler ◽  
V. Zubialevich ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Threading Dislocation ◽  
Dislocation Densities

Characterization of InGaN/GaN Multiple Quantum Wells Grown on Sapphire Substrates by Nano-scale Epitaxial Lateral Overgrowth Technique

2011 ◽  
Vol 1288 ◽  
Author(s):  
W.K. Fong ◽  
K.K. Leung ◽  
Charles Surya
Keyword(s):  
Quantum Wells ◽  
Internal Quantum Efficiency ◽  
Average Diameter ◽  
Control Device ◽  
Multiple Quantum Wells ◽  
Epitaxial Lateral Overgrowth ◽  
Multiple Quantum ◽  
Threading Dislocation ◽  
Nano Scale ◽  
Proposed Model

ABSTRACTHigh-quality InGaN/GaN multiple quantum wells (MQWs) were fabricated on nano-scale epitaxial lateral overgrown (NELO) GaN layers which was prepared using nanometer-scale SiO2 islands, with an average diameter and interdistance of 300nm and 200nm respectively, as the growth mask. The active region of the device consists of five periods of GaN/InGaN MQWs were grown on top of the NELO layer using MOCVD technique. It is observed that some of the dislocations from the undoped GaN were blocked by the SiO2 growth mask and typical threading dislocation (TD) density found in the NELO samples is ~7.5×107cm-2. Significant improvement in the electroluminescence (EL) is observed which is believed to partly arise from the improvement in the internal quantum efficiency (ηi). The experimental data on the temperature dependence of the photoluminescence (PL) were fitted to a proposed model using Levenberg-Marquardt approximation. Based on our analyses it is found that the relative improvement in ηi at 300K over a control device grown in the same growth condition but without the NELO layer to a NELO device is only 0.59. It is generally accepted that TD is the non-radiative recombination center which affects the IQE. Therefore, room-temperature IQE values also support that NELO device exhibits lower TD density.

FEMTOSECOND SPECTRAL HOLE-BURNING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Multiple Quantum ◽  
Spectral Hole

FAR INFRARED MAGNETO-ABSORPTION STUDY OF BARRIER IMPURITIES AND SCREENING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-239-C5-242 ◽  
Author(s):  
E. GLASER ◽  
B. V. SHANABROOK ◽  
R. J. WAGNER ◽  
R. L. HAWKINS ◽  
W. J. MOORE ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Far Infrared ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Absorption Study

Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars

2012 ◽  
Vol 100 (26) ◽  
pp. 261103 ◽  
Author(s):  
J.-R. Chang ◽  
S.-P. Chang ◽  
Y.-J. Li ◽  
Y.-J. Cheng ◽  
K.-P. Sou ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Luminescent Properties ◽  
Multiple Quantum Wells ◽  
Core Shell ◽  
Multiple Quantum
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