Fabricating Multiple Channeled Zinc Oxide Thin Film Transistor Via Sol-Gel Method

2013 ◽  
Vol 50 (8) ◽  
pp. 107-111
Author(s):  
G.-Y. Chiou ◽  
S.-T. Liu ◽  
S.-Z. Chen ◽  
H. J. H. Chen
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Gel Method ◽  
Sol Gel Method

Bottom-Gate Transparent Zinc Oxide Thin Film Transistor Fabricated by Sol–Gel Spin Coating

2013 ◽  
Vol 5 (2) ◽  
pp. 209-212
Author(s):  
Haishan Cui ◽  
Tao Ding ◽  
Zeng Liang Shi ◽  
Shengjiang Fang ◽  
Guofeng Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Spin Coating ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Bottom Gate

Stability characteristics of gallium-doped zinc-tin-oxide thin-film transistors fabricated using a sol-gel method

2013 ◽  
Vol 62 (8) ◽  
pp. 1176-1182 ◽  
Author(s):  
Jong Hoon Lee ◽  
Chang Hoi Kim ◽  
Hong Seung Kim ◽  
Jae Hoon Park ◽  
Jin Hwa Ryu ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Gel Method ◽  
Sol Gel Method ◽  
Zinc Tin Oxide

scholarly journals Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

AIP Advances ◽  
2016 ◽  
Vol 6 (7) ◽  
pp. 075217 ◽  
Author(s):  
Minkyu Chun ◽  
Jae Gwang Um ◽  
Min Sang Park ◽  
Md Delwar Hossain Chowdhury ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Bias Stress ◽  
Dual Gate ◽  
Gate Potential ◽  
Indium Gallium
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