Conduction Band-Offset in GeO2/Ge Stack Determined by Internal Photoemission Spectroscopy

2013 ◽  
Vol 50 (4) ◽  
pp. 91-95 ◽  
Author(s):  
W. Zhang ◽  
T. Nishimura ◽  
K. Nagashio ◽  
K. Kita ◽  
A. Toriumi
Keyword(s):  
Conduction Band ◽  
Photoemission Spectroscopy ◽  
Band Offset ◽  
Internal Photoemission ◽  
Conduction Band Offset

Band Alignment of CdS/Cu2ZnSnSe4 Heterointerface and Solar Cell Performances

MRS Advances ◽  
2017 ◽  
Vol 2 (53) ◽  
pp. 3157-3162 ◽  
Author(s):  
Takehiko Nagai ◽  
Shinho Kim ◽  
Hitoshi Tampo ◽  
Kang Min Kim ◽  
Hajime Shibata ◽  
...  
Keyword(s):  
Conduction Band ◽  
Band Alignment ◽  
Photoemission Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray ◽  
Heterojunction Solar Cells ◽  
Conduction Band Offset ◽  
Ultraviolet Photoemission Spectroscopy ◽  
Large Spike

ABSTRACTWe determined that the conduction band offset (CBO) and the valence band offset (VBO) at the CdS/ Cu2ZnSnSe4 (CZTSe) heterointerface are +0.56 and +0.89eV, respectively, by using X-ray photoemission spectroscopy (XPS), ultraviolet photoemission spectroscopy (UPS) and inversed photoemission spectroscopy (IPES). A positive CBO value, so-called “spike” structure, means that the position of conduction band becomes higher than that of absorber layer. The evaluated CBO of +0.56 eV suggests that the conduction band alignment at CdS/CZTSe interface is enough to become an electron barrier. Despite such a large spike structure in the conduction band at the interface, a conversion efficiency of 8.7 % could be obtained for the CdS/CZTSe heterojunction solar cells.

Conduction band offset at GeO2/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies

2013 ◽  
Vol 102 (10) ◽  
pp. 102106 ◽  
Author(s):  
W. F. Zhang ◽  
T. Nishimula ◽  
K. Nagashio ◽  
K. Kita ◽  
A. Toriumi
Keyword(s):  
Conduction Band ◽  
Band Offset ◽  
X Ray ◽  
Internal Photoemission ◽  
Conduction Band Offset

scholarly journals Conduction band offset-dependent induced threshold voltage shifts in a-InGaZnO TFTs under positive bias illumination stress

AIP Advances ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 035312
Author(s):  
Hyojung Kim ◽  
Soonkon Kim ◽  
Jongmin Yoo ◽  
Changyong Oh ◽  
Bosung Kim ◽  
...  
Keyword(s):  
Conduction Band ◽  
Threshold Voltage ◽  
Band Offset ◽  
Positive Bias ◽  
Conduction Band Offset

Deep trap characterisation and conduction band offset determination of AI0.48In0.52As/(Ga0.7AI0.3)0.48In0.52As heterostructures

1997 ◽  
Vol 13 (11) ◽  
pp. 971-973 ◽  
Author(s):  
F. Ducroquet ◽  
G. Jacovetti ◽  
K. Rezzoug ◽  
S. Ababou ◽  
G. Guillot ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Trap ◽  
Band Offset ◽  
Conduction Band Offset

The Influence of Conduction Band Offset on CdTe Solar Cells

2017 ◽  
Vol 47 (2) ◽  
pp. 1201-1207 ◽  
Author(s):  
Yunfei Chen ◽  
Xuehai Tan ◽  
Shou Peng ◽  
Cao Xin ◽  
Alan E. Delahoy ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conduction Band ◽  
Band Offset ◽  
Conduction Band Offset ◽  
Cdte Solar Cells
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