Reactive ion etching technology in thin-film-transistor processing

1992 ◽  
Vol 36 (1) ◽  
pp. 69-75 ◽  
Author(s):  
Y. Kuo
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Reactive Ion Etching ◽  
Ion Etching

Monitoring PMMA Elimination by Reactive Ion Etching from a Lamellar PS-b-PMMA Thin Film byex SituTEM Methods

2010 ◽  
Vol 43 (20) ◽  
pp. 8651-8655 ◽  
Author(s):  
Richard A. Farrell ◽  
Nikolay Petkov ◽  
Matthew T. Shaw ◽  
Vladimir Djara ◽  
Justin D. Holmes ◽  
...  
Keyword(s):  
Thin Film ◽  
Reactive Ion Etching ◽  
Ion Etching

Characteristics of Indium-Tin Oxide Thin Film Etched by Reactive Ion Etching

1994 ◽  
Vol 33 (Part 1, No. 12B) ◽  
pp. 7057-7060 ◽  
Author(s):  
Meiso Yokoyama ◽  
Jiin Wen Li ◽  
Shui Hsiang Su ◽  
Yan Kuin Su
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Reactive Ion Etching ◽  
Oxide Thin Film ◽  
Ion Etching

Optimization of time on CF4/O2 etchant for inductive couple plasma reactive ion etching of TiO2 thin film

2016 ◽  
Author(s):  
R. Adzhri ◽  
M. K. Md. Arshad ◽  
M. F. M. Fathil ◽  
U. Hashim ◽  
A. R. Ruslinda ◽  
...  
Keyword(s):  
Thin Film ◽  
Tio2 Thin Film ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Couple Plasma ◽  
Inductive Couple Plasma

Study on Reactive Ion Etching of Vanadium Oxide Thin Film by Taguchi Method

2014 ◽  
Vol 909 ◽  
pp. 91-94
Author(s):  
Jun Gou ◽  
Hui Ling Tai ◽  
Jun Wang ◽  
De En Gu ◽  
Xiong Bang Wei ◽  
...  
Keyword(s):  
Thin Film ◽  
Taguchi Method ◽  
Vanadium Oxide ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Oxide Thin Film ◽  
Optimum Process ◽  
Rf Power ◽  
Ion Etching ◽  
Vanadium Oxide Thin Film

A high selectivity patterning technology of vanadium oxide (VOx) thin film was suggested in this paper. VOxthin film was etched through a photoresist (PR) mask using Cl/N based gases in a reactive ion etching (RIE) system. Taguchi method was used for process design to identify factors that influence the patterning and find optimum process parameters. Experimental results suggested that RF power was the largest contribution factor for VOxetch rate, PR selectivity and uniformity on 6 inch diameter wafer. Uniformity and PR selectivity were improved by introducing a small amount of N2. High resolution and low roughness patterning transfer was achieved with a non uniformity of 2.4 %, an VOxetch rate of 74 nm/min, a PR selectivity of 0.96, a Si3N4selectivity of 5 and a SiO2selectivity of 10.

Reactive ion etching of Fe-Si-Al alloy for thin film head

1991 ◽  
Vol 27 (6) ◽  
pp. 4888-4890 ◽  
Author(s):  
K. Kinoshita ◽  
K. Yamada ◽  
H. Matsutera
Keyword(s):  
Thin Film ◽  
Reactive Ion Etching ◽  
Al Alloy ◽  
Ion Etching
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