Two-Dimensional Analysis of High-Voltage Power Transistors

1977 ◽  
Vol 21 (4) ◽  
pp. 306-314 ◽  
Author(s):  
S. P. Gaur
Keyword(s):  
Dimensional Analysis ◽  
High Voltage ◽  
Two Dimensional ◽  
Power Transistors

An Image Reconstruction System Applied to High Voltage Microscopy

1975 ◽  
Vol 33 ◽  
pp. 292-293
Author(s):  
D. E. Johnson
Keyword(s):  
High Voltage ◽  
Prior Information ◽  
Block Diagram ◽  
Three Dimensional ◽  
Real Space ◽  
Two Dimensional ◽  
Efficient Manner ◽  
Fourier Methods ◽  
Tilt Series ◽  
Methods Of Reconstruction

Increased specimen penetration; the principle advantage of high voltage microscopy, is accompanied by an increased need to utilize information on three dimensional specimen structure available in the form of two dimensional projections (i.e. micrographs). We are engaged in a program to develop methods which allow the maximum use of information contained in a through tilt series of micrographs to determine three dimensional speciman structure.In general, we are dealing with structures lacking in symmetry and with projections available from only a limited span of angles (±60°). For these reasons, we must make maximum use of any prior information available about the specimen. To do this in the most efficient manner, we have concentrated on iterative, real space methods rather than Fourier methods of reconstruction. The particular iterative algorithm we have developed is given in detail in ref. 3. A block diagram of the complete reconstruction system is shown in fig. 1.

Quasi-two-dimensional simulations of bipolar silicon power transistors

Physica B+C ◽  
1985 ◽  
Vol 129 (1-3) ◽  
pp. 337-341
Author(s):  
Wolf-Dieter Nowak ◽  
Heinrich Schlangenotto
Keyword(s):  
Two Dimensional ◽  
Power Transistors
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