Session details: New memory technology

2009 ◽  
Vol 37 (3) ◽  
Author(s):  
Sudhanva Gurumurthi
Keyword(s):  
New Memory Technology

NMTSim: Transaction-Command Based Simulator for New Memory Technology Devices

2020 ◽  
Vol 19 (1) ◽  
pp. 76-79
Author(s):  
Peng Gu ◽  
Benjamin S. Lim ◽  
Wenqin Huangfu ◽  
Krishan T. Malladi ◽  
Andrew Chang ◽  
...  
Keyword(s):  
New Memory Technology

Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions

MRS Bulletin ◽  
2004 ◽  
Vol 29 (11) ◽  
pp. 818-821 ◽  
Author(s):  
G. Grynkewich ◽  
J. Åkerman ◽  
P. Brown ◽  
B. Butcher ◽  
R.W. Dave ◽  
...  
Keyword(s):  
Flash Memory ◽  
High Speed ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Memory Cell ◽  
Random Access Memory ◽  
Access Memory ◽  
Magnetoresistive Random Access Memory ◽  
Static Ram ◽  
New Memory Technology

AbstractMagnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory.

QsRAM: the new memory technology

2004 ◽  
Author(s):  
Sima Dimitrijev ◽  
Herbert B. Harrison
Keyword(s):  
New Memory Technology

scholarly journals A Versatile, Voltage-Pulse Based Read and Programming Circuit for Multi-Level RRAM Cells

Electronics ◽  
2021 ◽  
Vol 10 (5) ◽  
pp. 530
Author(s):  
Stefan Pechmann ◽  
Timo Mai ◽  
Matthias Völkel ◽  
Mamathamba K. Mahadevaiah ◽  
Eduardo Perez ◽  
...  
Keyword(s):  
Voltage Drop ◽  
Random Access ◽  
Process Variations ◽  
Resistive Random Access Memory ◽  
Cmos Process ◽  
Programming System ◽  
Analog Memory ◽  
Wide Range ◽  
Multi Level ◽  
New Memory Technology

In this work, we present an integrated read and programming circuit for Resistive Random Access Memory (RRAM) cells. Since there are a lot of different RRAM technologies in research and the process variations of this new memory technology often spread over a wide range of electrical properties, the proposed circuit focuses on versatility in order to be adaptable to different cell properties. The circuit is suitable for both read and programming operations based on voltage pulses of flexible length and height. The implemented read method is based on evaluating the voltage drop over a measurement resistor and can distinguish up to eight different states, which are coded in binary, thereby realizing a digitization of the analog memory value. The circuit was fabricated in the 130 nm CMOS process line of IHP. The simulations were done using a physics-based, multi-level RRAM model. The measurement results prove the functionality of the read circuit and the programming system and demonstrate that the read system can distinguish up to eight different states with an overall resistance ratio of 7.9.

Magnetic bubbles—An emerging new memory technology

1975 ◽  
Vol 63 (8) ◽  
pp. 1176-1195 ◽  
Author(s):  
A.H. Bobeck ◽  
P.I. Bonyhard ◽  
J.E. Geusic
Keyword(s):  
New Memory Technology
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