scholarly journals Quantum Dynamics and Dissipation Effects in the Resonant Tunneling of Molecular Magnets

2002 ◽  
Vol 145 ◽  
pp. 370-379 ◽  
Author(s):  
Seiji Miyashita ◽  
Keiji Saito ◽  
Hiroki Nakano ◽  
Masamichi Nishino
1999 ◽  
Vol 10 (08) ◽  
pp. 1419-1425
Author(s):  
S. MIYASHITA ◽  
K. SAITO

An investigation for numerical method to study quantum dynamics in dissipative environments is presented, studying the resonant tunneling phenomena of the low temperature magnetization process of Mn 12. It is pointed out that information of pure quantum transition can be obtained from deceptive nonadiabatic transitions due to the dissipative environments.


2004 ◽  
Vol 346-347 ◽  
pp. 216-220 ◽  
Author(s):  
Hiroyuki Nojiri ◽  
Tomohiro Taniguchi ◽  
Yoshitami Ajiro ◽  
Achim Müller ◽  
Bernard Barbara

2004 ◽  
Vol 272-276 ◽  
pp. 1106-1108 ◽  
Author(s):  
R Amigó ◽  
J Tejada ◽  
E.M Chudnovsky ◽  
J.M Hernandez ◽  
A Garcı́a-Santiago

1977 ◽  
Vol 38 (11) ◽  
pp. 1443-1448 ◽  
Author(s):  
G. Sarrabayrouse ◽  
J. Buxo ◽  
D. Esteve

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-585-C5-588 ◽  
Author(s):  
R. E. NAHORY ◽  
N. TABATABAIE

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.


Sign in / Sign up

Export Citation Format

Share Document