scholarly journals Monte Carlo Simulation of the Plane Rotator Model. II: Response to an External Field and Scaling Relations

1980 ◽  
Vol 63 (3) ◽  
pp. 797-807 ◽  
Author(s):  
S. Miyashita
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
External Field ◽  
Scaling Relations ◽  
Rotator Model ◽  
Plane Rotator

scholarly journals Monte Carlo Simulation and Static and Dynamic Critical Behavior of the Plane Rotator Model

1978 ◽  
Vol 60 (6) ◽  
pp. 1669-1685 ◽  
Author(s):  
S. Miyashita ◽  
H. Nishimori ◽  
A. Kuroda ◽  
M. Suzuki
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Critical Behavior ◽  
Rotator Model ◽  
Plane Rotator

scholarly journals MONTE CARLO SIMULATION OF SPIN RELAXATION IN NANOWIRES AND 2-D CHANNELS OF II–VI SEMICONDUCTORS

SPIN ◽  
2012 ◽  
Vol 02 (02) ◽  
pp. 1250007 ◽  
Author(s):  
ASHUTOSH SHARMA ◽  
SWETALI NIMJE ◽  
AKSHAYKUMAR SALIMATH ◽  
BAHNIMAN GHOSH
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
External Field ◽  
Spin Relaxation ◽  
Simulation Method ◽  
Relaxation Length ◽  
Factors Affecting ◽  
Spin Dephasing ◽  
Spin Polarized ◽  
The Many

We have analyzed spin relaxation behavior of various II–VI semiconductors for nanowire structure and 2-D channel by simulating spin polarized transport through a semiclassical approach. Monte Carlo simulation method has been applied to simulate our model. D'yakonov–Perel mechanism and Elliot–Yafet mechanism are dominant for spin relaxation in II–VI semiconductors. Variation in spin relaxation length with external field has been analyzed and comparison is drawn between nanowire and 2-D channels. Spin relaxation lengths of various II–VI semiconductors are compared at an external field of 1 kV/cm to understand the predominant factors affecting spin dephasing in them. Among the many results obtained, most noticeable one is that spin relaxation length in nanowires is many times greater than that in 2-D channel.

Sign in / Sign up

Export Citation Format

Share Document