scholarly journals Optical Absorption Spectra of Model Mixed Crystals: The Effect of Randomness in the Transition Dipole Moments

1976 ◽  
Vol 55 (2) ◽  
pp. 370-382
Author(s):  
K. Niizeki
Keyword(s):  
Optical Absorption ◽  
Absorption Spectra ◽  
Dipole Moments ◽  
Mixed Crystals ◽  
Optical Absorption Spectra ◽  
Transition Dipole ◽  
Transition Dipole Moments

scholarly journals Optical Studies on KBr:Tl and KCl-Br:Tl Mixed Crystals

2010 ◽  
Vol 7 (2) ◽  
pp. 425-432
Author(s):  
P. Eswaran ◽  
A. Anbagi ◽  
S. Nagarajan
Keyword(s):  
Optical Absorption ◽  
Single Crystals ◽  
Absorption Spectra ◽  
Emission Band ◽  
Mixed Crystals ◽  
Optical Absorption Spectra ◽  
Optical Studies ◽  
Excitation Spectra ◽  
X Ray ◽  
Wavelength Side

Optical absorption spectra of KBr:Tl+(0.0125 mol%) single crystals shows A, B and C bands around 258, 220 and 210 nm respectively. In KCl0.1Br0.9:Tl+(0.0125 mol%) mixed crystals exhibit slightly broadening of the A-band towards lower wavelength side. The broadening of the absorption spectra are suggested to be due to some complex Tl+centers involving Br-and Cl-ions formed in the mixed crystals. When excited at A, B and C-bands of Tl+ions, PL of KBr:Tl+showed emission band around 320 with a prominent shoulder around 365 nm. In KCl0.1Br0.9mixed crystals the shoulder around 365 nm is not prominent due to the perturbing influence of Cl-ions. Addition bands in the excitation spectra are attributed to the presence of Tl+dimmers. PSL observed in X-ray irradiated crystals resembled their respective PL emissions indicating that PSL in them is due to Tl+ions.

Photoluminescence and optical absorption spectra of γ1-(GaxIn1-x)2Se3 mixed crystals

2005 ◽  
Vol 242 (10) ◽  
pp. 2113-2120 ◽  
Author(s):  
M. Kranjčec ◽  
I. P. Studenyak ◽  
Yu. M. Azhniuk
Keyword(s):  
Optical Absorption ◽  
Absorption Spectra ◽  
Mixed Crystals ◽  
Optical Absorption Spectra

scholarly journals Fast optical absorption spectra calculations for periodic solid state systems

2020 ◽  
Vol 15 (1) ◽  
pp. 89-113
Author(s):  
Felix Henneke ◽  
Lin Lin ◽  
Christian Vorwerk ◽  
Claudia Draxl ◽  
Rupert Klein ◽  
...  
Keyword(s):  
Solid State ◽  
Optical Absorption ◽  
Absorption Spectra ◽  
Optical Absorption Spectra

NIR and Upconversion Luminescence Properties of Nd3+ Doped in Gd2O3-CaO-SiO2-B2O3 Glass System

2014 ◽  
Vol 548-549 ◽  
pp. 124-128 ◽  
Author(s):  
S. Insiripong ◽  
S. Kaewjeang ◽  
U. Maghanemi ◽  
H.J. Kim ◽  
N. Chanthima ◽  
...  
Keyword(s):  
Molecular Weight ◽  
Optical Absorption ◽  
Absorption Spectra ◽  
Upconversion Luminescence ◽  
Emission Spectra ◽  
Concentration Quenching ◽  
Luminescence Spectra ◽  
Optical Absorption Spectra ◽  
Glass Matrices ◽  
Nir Luminescence

In this work, properties of Nd3+ in Gd2O3-CaO-SiO2-B2O3 glass systems with composition 25Gd2O3-10CaO-10SiO2-(55-x)B2O3-xNd2O3 where x = 0.0, 0.5, 1.0, 1.5, 2.0 and 2.5 mol% were investigated. The optical absorption spectra show peaks at 4F3/2 (877 nm) , 4F5/2+2H9/2 (802 nm), 4F7/2+4S3/2 (743 nm), 4F9/2 (682 nm), 2H11/2 (627 nm), 2G7/2 +4G5/2 (582 nm), 4G7/2 +2K13/2 (527 nm), 4G11/2 (481 nm), 2P1/2 (427 nm) and 2L15/2 + 4D1/2 + 1I11/2+ 4D5/2+ 4D3/2 (355 nm) reflecting the Nd3+ ions in glass matrices. The densities were increased with increasing of Nd2O3 concentration. This indicates the increase of the molecular weight by the replacement of B2O3 with a heavier Nd2O3 oxide in the glass. The upconversion luminescence spectra show bands at 393 nm for all Nd2O3 concentration and the strongest intensity from 2.5 % mol of Nd2O3 was obtained. For NIR luminescence, the intensity of Nd3+ emission spectra increases with increasing concentrations of Nd3+ up to 1.5 mol% and beyond 1.5 mol% the concentration quenching is observed.

OPTICAL ABSORPTION SPECTRA OF ARSENIC AND PHOSPHORUS IN SILICON

1962 ◽  
Vol 40 (10) ◽  
pp. 1480-1489 ◽  
Author(s):  
J. W. Bichard ◽  
J. C. Giles
Keyword(s):  
Optical Absorption ◽  
Absorption Spectra ◽  
Excited States ◽  
Ground State ◽  
Absorption Lines ◽  
Full Width ◽  
Optical Absorption Spectra ◽  
Phosphorus Impurity ◽  
Line Widths ◽  
Phosphorus In Silicon

The optical absorption spectra of arsenic and phosphorus donor impurities in silicon have been studied under conditions of improved resolution. Absorption lines due to transitions from the impurity ground state to the excited states 2p0, 2p±, 3p0, 3p±, 4p0, 4 p±, and 5p0, and 5p± have been observed at 4.2° K. The relative intensities of some of these absorption lines are compared with existing experimental and theoretical estimates. The contribution of instrumental broadening to the observed line widths is assessed and natural line widths are estimated. The estimates indicate values for the natural line widths which are much less than those previously reported. For phosphorus impurity, the natural line widths are estimated to be less than 0.08 × 10−3 electron volts full width at half-maximum. The possibility of concentration broadening is discussed in connection with the arsenic data.

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