Pressure-Induced Increase inJcacross Single Grain Boundaries in YBa2Cu3Ox

2007 ◽  
Vol 76 (Suppl.A) ◽  
pp. 118-119
Author(s):  
Takahiro Tomita ◽  
James S. Schilling ◽  
Lihura Chen ◽  
Boyd W. Veal ◽  
Helmut Claus
Keyword(s):  
Grain Boundaries ◽  
Single Grain

Grain Boundary Atomic Structures in SrTiO3 and BaTiO3

2007 ◽  
Vol 558-559 ◽  
pp. 851-856 ◽  
Author(s):  
Takahisa Yamamoto ◽  
Teruyasu Mizoguchi ◽  
S.Y. Choi ◽  
Yukio Sato ◽  
Naoya Shibata ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Annealing Temperature ◽  
Unit Length ◽  
Rate Dependency ◽  
Atomic Structures ◽  
Current Voltage ◽  
Single Grain ◽  
Current Voltage Characteristics ◽  
Theoretical Results

SrTiO3 bicrystals with various types of grain boundaries were prepared by joining two single crystals at high temperature. By using the bicrystals, we examined their current-voltage characteristics across single grain boundaries from a viewpoint of point defect segregation in the vicinity of the grain boundaries. Current-voltage property in SrTiO3 bicrystals was confirmed to show a cooling rate dependency from annealing temperature, indicating that cation vacancies accumulate due to grain boundary oxidation. The theoretical results obtained by ab-initio calculation clearly showed that the formation energy of Sr vacancies is the lowest comparing with Ti and O vacancies in oxidized atomosphere. The formation of a double Schottky barrier (DSB) in n-type SrTiO3 is considered to be closely related to the accumulation of the charged Sr vacancies. Meanwhile, by using three types of low angle boundaries, the excess charges related to one grain boundary dislocation par unit length was estimated. In this study, we summarized our results obtained in our group.

Single-Grain Boundaries in PTC Resistors

1996 ◽  
Vol 79 (4) ◽  
pp. 997-1001 ◽  
Author(s):  
Makoto Kuwabara ◽  
Ken-ichiro Morimo ◽  
Tatsuya Matsunaga
Keyword(s):  
Grain Boundaries ◽  
Single Grain

Spatially resolved observation of charge transfer across single grain boundaries in YBaCuO films

Cryogenics ◽  
1990 ◽  
Vol 30 (5) ◽  
pp. 397-400 ◽  
Author(s):  
J. Mannhart ◽  
R. Gross ◽  
R.P. Huebener ◽  
P. Chaudhari ◽  
D. Dlmos ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Grain Boundaries ◽  
Spatially Resolved ◽  
Single Grain

Location Control of Laterally Columnar Si Grains by Dual-Beam Excimer-Laser Melting of Si Thin-Film

2000 ◽  
Vol 621 ◽  
Author(s):  
Ryoichi Ishihara
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Heat Source ◽  
Grain Boundaries ◽  
Excimer Laser ◽  
Laser Melting ◽  
Dual Beam ◽  
Single Grain ◽  
Free Area ◽  
Si Thin Film

ABSTRACTThe offset of the underlying TiW is introduced in the island of Si, SiO2 and TiW on glass. During the dual-beam excimer-irradiation to the Si and the TiW, the offset in TiW acts as an extra heat source, which melts completely the Si film near the edge, whereas the Si inside is partially melted. The laterally columnar Si grains with a length of 3.2 μm were grown from the inside of the island towards the edge. By changing the shape of the edge, the direction of the solidification of the grain was successfully controlled in such a way that the all grain-boundaries are directed towards the edge and a single grain expands. The grain-boundary-free area as large as 4 μm × 3 μm was obtained at a predetermined position of glass.

Electrical characterisation of single grain boundaries in DyBa2Cu3Ox ceramics

1992 ◽  
Vol 196 (1-2) ◽  
pp. 1-6 ◽  
Author(s):  
G. Schindler ◽  
B. Seebacher ◽  
R. Kleiner ◽  
P. Müller ◽  
K. Andres
Keyword(s):  
Grain Boundaries ◽  
Single Grain

Generation of Magnetic Flux by Single Grain Boundaries ofYBa2Cu3O7−x

1996 ◽  
Vol 77 (13) ◽  
pp. 2782-2785 ◽  
Author(s):  
J. Mannhart ◽  
H. Hilgenkamp ◽  
B. Mayer ◽  
Ch. Gerber ◽  
J. R. Kirtley ◽  
...  
Keyword(s):  
Magnetic Flux ◽  
Grain Boundaries ◽  
Single Grain

Quantitative Icts Measurement of Interface States at Grain Boundaries in ZnO Varistors

1997 ◽  
Vol 500 ◽  
Author(s):  
K. Mukae ◽  
A. Tanaka
Keyword(s):  
Grain Boundaries ◽  
Interface States ◽  
Zno Varistors ◽  
Single Grain ◽  
Doped Zno ◽  
Transient Spectroscopy ◽  
Er Doped ◽  
Capacitance Transient ◽  
Rare Earth Doped ◽  
Density Of Interface States

ABSTRACTIsothermal capacitance transient spectroscopy(ICTS) measurement is applied to ZnO:Pr varistors. A simple peak corresponding to the interface states at grain boundaries was obtained and the energy level of the interface states revealed to be monoenergetic and located around 0.9eV below the conduction band. The cross section was calculated as around 10−14 cm2. Quantitative treatment of the ICTS intensity in relation to the density of interface states at grain boundaries was established. The density of interface states was obtained from the linear relation between ICTS intensity and reciprocal carrier density(ND). According to experiments on series of rare-earth doped ZnO varistors, the interface states of Pr, Tb or Nd doped ZnO varistors had higher density of states than La or Er doped varistors. Moreover, application of ICTS measurement to single grain boundary using microelectrodes revealed that higher density of interface states gave higher nonlinearity in I-V characteristics.

Characterization of Single Grain Boundaries in a Bi-Doped ZnO Varistor Using a Focused Ion Beam System

2000 ◽  
Vol 39 (Part 1, No. 7B) ◽  
pp. 4493-4496 ◽  
Author(s):  
Junji Tanimura ◽  
Osamu Wada ◽  
Hiroshi Kurokawa ◽  
Naomi Furuse ◽  
Masahiro Kobayashi
Keyword(s):  
Grain Boundaries ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Zno Varistor ◽  
Beam System ◽  
Single Grain ◽  
Doped Zno
Sign in / Sign up

Export Citation Format

Share Document