Electron-Diffraction Study of Liquid-Solid Transition of Thin Metal Films

1954 ◽  
Vol 9 (3) ◽  
pp. 359-363 ◽  
Author(s):  
Mieko Takagi
Keyword(s):  
Electron Diffraction ◽  
Diffraction Study ◽  
Electron Diffraction Study ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films

Observation of Ultrafast Lattice Heating in thin Metal Films using Time-resolved Electron Diffraction

2009 ◽  
Vol 1230 ◽  
Author(s):  
Manuel Ligges ◽  
Carla Streubühr ◽  
Thorsten Brazda ◽  
Oliver Posth ◽  
Christph Hassel ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Laser Pulse ◽  
Femtosecond Laser ◽  
Temporal Evolution ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Diffraction Intensity ◽  
Time Resolved ◽  
Lattice Heating

AbstractWe show that time-resolved electron diffraction is capable of revealing the ultrafast lattice heating in thin metal films following excitation by a femtosecond laser pulse. The build-up of the lattice temperature leads to a reduction of the diffraction intensity of the various diffraction orders due to the Debye-Waller-effect. We also observed a reduction of the transmitted (000)-signal which exhibits the same temporal evolution as the diffraction signals.

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

On the electrocatalytic symbiotic synergism between Pt, Ni and Al in plasma vapour deposited PtxNiyAlz thin metal films for water electrolysis

2021 ◽  
Vol 494 ◽  
pp. 229344
Author(s):  
Roelof J. Kriek ◽  
Liesel A. van Heerden ◽  
Anzel Falch ◽  
Malcolm I. Gillespie ◽  
Alaa Y. Faid ◽  
...  
Keyword(s):  
Water Electrolysis ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films
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