A Gigantic Photoinduced Dielectric Constant of Quantum Paraelectric Perovskite Oxides Observed under a Weak DC Electric Field

2003 ◽  
Vol 72 (1) ◽  
pp. 37-40 ◽  
Author(s):  
Masaki Takesada ◽  
Toshirou Yagi ◽  
Mitsuru Itoh ◽  
Shin-ya Koshihara
Keyword(s):  
Dielectric Constant ◽  
Electric Field ◽  
Perovskite Oxides ◽  
Quantum Paraelectric ◽  
Dc Electric Field

scholarly journals F-centers mechanism of long-term relaxation in lead zirconate-titanate based piezoelectric ceramics. 2. After-field relaxation

2016 ◽  
Vol 06 (03) ◽  
pp. 1650019 ◽  
Author(s):  
V. M. Ishchuk ◽  
D. V. Kuzenko
Keyword(s):  
Dielectric Constant ◽  
Electric Field ◽  
Lead Zirconate Titanate ◽  
Oxygen Vacancies ◽  
Lead Zirconate ◽  
Relaxation Processes ◽  
Logarithmic Function ◽  
External Effects ◽  
Dc Electric Field

The paper presents results of experimental study of the dielectric constant relaxation during aging process in Pb(Zr,Ti)O3based solid solutions (PZT) after action of external DC electric field. The said process is a long-term one and is described by the logarithmic function of time. Reversible and nonreversible relaxation process takes place depending on the field intensity. The relaxation rate depends on the field strength also, and the said dependence has nonlinear and nonmonotonic form, if external field leads to domain disordering. The oxygen vacancies-based model for description of the long-term relaxation processes is suggested. The model takes into account the oxygen vacancies on the sample's surface ends, their conversion into [Formula: see text]- and [Formula: see text]-centers under external effects and subsequent relaxation of these centers into the simple oxygen vacancies after the action termination. [Formula: see text]-centers formation leads to the violation of the original sample's electroneutrality, and generate intrinsic DC electric field into the sample. Relaxation of [Formula: see text]-centers is accompanied by the reduction of the electric field, induced by them, and relaxation of the dielectric constant, as consequent effect.

Dielectric Enhancement in Quantum Paraelectric SrTiO 3 by UV Laser Irradiation under DC Electric Field

2003 ◽  
Vol 286 (1) ◽  
pp. 3-8 ◽  
Author(s):  
Masaki Takesada ◽  
Mitsuru Itoh ◽  
Toshirou Yagi ◽  
Shin-Ya Koshihara
Keyword(s):  
Electric Field ◽  
Laser Irradiation ◽  
Uv Laser ◽  
Quantum Paraelectric ◽  
Dc Electric Field ◽  
Dielectric Enhancement

scholarly journals Mechanism of nonlinear dielectric constant of BaTiO３-based ceramics under high DC electric field

2005 ◽  
Vol 54 (10) ◽  
pp. 4914
Author(s):  
Liang Rui-Hong ◽  
Dong Xian-Lin ◽  
Chen Ying ◽  
Cao Fei ◽  
Wang Yong-Ling
Keyword(s):  
Dielectric Constant ◽  
Electric Field ◽  
Nonlinear Dielectric ◽  
Dc Electric Field

The High DC Electric Field Effects on the Dielectric Behavior of Barium Strontium Titanate Ceramics

2013 ◽  
Vol 547 ◽  
pp. 125-132
Author(s):  
Qi Wei Zhang ◽  
Ji Wei Zhai ◽  
Xi Yao
Keyword(s):  
Phase Transition ◽  
Dielectric Constant ◽  
Electric Field ◽  
Paraelectric Phase ◽  
Dielectric Behavior ◽  
Solid State Reactions ◽  
Electric Field Effects ◽  
Temperature Dependences ◽  
Dc Electric Field ◽  
Titanate Ceramics

BaxSr1-xTiO3 (x=0.4, 0.5, 0.6) ceramics were fabricated by the conventional solid-state reactions method. The temperature dependences of the dielectric constant and tunability were investigated under high DC electric field. It was found that the change of dielectric constant and tunability under the applied electric field were closely related to ferroelectric phase, phase transition region and paraelectric phase states. The Curie temperature (Tc) was gradually shifted to higher temperature and were broadened and depressed with increasing of DC electric field. The tunability dependence of temperature exhibits different trends in a wide temperature range and reaches a maximum value near the ferroelectric-paraelectric phase transition. These results may be helpful in understanding the mechanism of dielectric response under higher electric field.

Phase Transition Characterization Dependent on Temperature and DC Electric Field for (Pb, La) (Zr, Ti)O3 Antiferroelectric Thick Films

2012 ◽  
Vol 503 ◽  
pp. 97-102 ◽  
Author(s):  
Xiu Jian Chou ◽  
Miao Xuan Du ◽  
Yong Bo Lv ◽  
Jun Liu ◽  
Wen Dong Zhang
Keyword(s):  
Phase Transition ◽  
Dielectric Constant ◽  
Electric Field ◽  
Applied Field ◽  
Thick Films ◽  
Sol Gel ◽  
Silicon Substrates ◽  
Dielectric Constant And Loss ◽  
Dc Electric Field ◽  
Antiferroelectric Thick Films

Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thick films were prepared on platinized silicon substrates by sol–gel methods. Films showed polycrystalline perovskite structure with a strong (100) preferred orientation. The antiferroelectric nature of the films was confirmed by the double hysteresis behaviors versus applied field. The temperature dependence of dielectric constant and loss displayed the Curie temperature was 225oC.The current caused by the polarization and depolarization of polar was detected at coupling application of electric field and temperature. The phase transition characterization could be effectively adjusted by electric field and temperature.

scholarly journals High-frequency capacitance-voltage characteristics of the heterogeneous structure based on the model of spherical semiconductor particles in a dielectric

2016 ◽  
Vol 06 (03) ◽  
pp. 1650020
Author(s):  
A. S. Tonkoshkur ◽  
A. V. Ivanchenko
Keyword(s):  
Dielectric Constant ◽  
Electric Field ◽  
Relative Dielectric Constant ◽  
Heterogeneous Structure ◽  
Donor Concentration ◽  
Energy Bands ◽  
Heterogeneous Structures ◽  
Semiconductor Particles ◽  
Two Component ◽  
Dc Electric Field

The dependence of the parameters of the capacitance effect in heterogeneous dispersed two-component structures based on semiconductors from the bulk fraction of the semiconductor component is modeled. The used method for determining the changes of the energy bands bending on the surface of the spherical semiconductor particle by applying dc electric field allowed to calculate the changes of the dipole moment and effective (taking into account the polarization of the free charge) dielectric constant of this semiconductor particle. This result allowed to use the known models of the dielectric constant of two-component structures for the description of the capacitance field effect in the heterogeneous structures. The relations allowing to estimate the value of the bulk donor concentration in the semiconductor component of the matrix of the heterogeneous system and the statistical mixture have been obtained. The approbation of the obtained calculation relations to evaluate the donor concentration in the ZnO grains of zinc oxide varistor ceramics leads to the correct values that are consistent with estimates of other methods and models. It is established that the sensitivity of the relative dielectric constant to the applied dc electric field is dependent on the bulk fraction of the semiconductor particles in the heterogeneous structures. The bulk fraction of the semiconductor particles significantly affects on the dielectric constant beginning with the values from [Formula: see text] for matrix systems and [Formula: see text] for statistical mixtures.

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