Electronic States of Toroidal Carbon Nanotubes

1998 ◽  
Vol 67 (1) ◽  
pp. 259-263 ◽  
Author(s):  
Ming-Fa Lin ◽  
Der-San Chuu
Keyword(s):  
Carbon Nanotubes ◽  
Electronic States

Electronic States in Capped Carbon Nanotubes

2002 ◽  
Vol 71 (11) ◽  
pp. 2824-2824 ◽  
Author(s):  
Tatsuya Yaguchi ◽  
Tsuneya Ando
Keyword(s):  
Carbon Nanotubes ◽  
Electronic States

ELECTRONIC STATES OF NANOSTRUCTURES OF CURVED GRAPHITIC CARBON CAGES

1996 ◽  
Vol 03 (01) ◽  
pp. 835-842 ◽  
Author(s):  
M. TSUKADA ◽  
K. AKAGI ◽  
R. TAMURA ◽  
S. IHARA
Keyword(s):  
Carbon Nanotubes ◽  
Electronic Structure ◽  
Systematic Study ◽  
Tight Binding ◽  
Electronic States ◽  
Graphitic Carbon ◽  
Graphitic Layer ◽  
Binding Models ◽  
Structure Of Carbon Nanotubes

Electronic structure of carbon nanotubes with cap and that of the helically coiled nanotubes are studied by the simple tight-binding models. The method of the development map is used for a systematic study of the electronic states. Several remarkable features of these cage structures are found and the relation to the topological disorders due to the disclination centers is discussed, which are inherent to the curved graphitic layer.

Near-field imaging and spectroscopy of electronic states in single-walled carbon nanotubes

2006 ◽  
Vol 243 (13) ◽  
pp. 3146-3150 ◽  
Author(s):  
Huihong Qian ◽  
Tobias Gokus ◽  
Neil Anderson ◽  
Lukas Novotny ◽  
Alfred J. Meixner ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Near Field ◽  
Electronic States ◽  
Single Walled Carbon Nanotubes ◽  
Single Walled Carbon ◽  
Near Field Imaging ◽  
Imaging And Spectroscopy ◽  
Walled Carbon Nanotubes ◽  
Field Imaging

FET Properties of Surface Silylated Single Wall Carbon Nanotubes

2006 ◽  
Vol 963 ◽  
Author(s):  
Ryotaro Kumashiro ◽  
Nobuya Hiroshiba ◽  
Hirotaka Ohashi ◽  
Takeshi Akasaka ◽  
Yutaka Maeda ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Field Effect Transistors ◽  
Electronic States ◽  
Single Wall Carbon Nanotubes ◽  
Chemical Modifications ◽  
Single Wall Carbon ◽  
Chemically Modified ◽  
Carrier Doping ◽  
P Type ◽  
Spread Sheet

ABSTRACTSingle wall carbon nanotubes (SWNTs) having semiconducting properties are promising as electronic materials for nano-scale devices in the future, and the electrical properties of SWNTs are of significantly fundamental and practical interests. It is well known that the field effect transistors (FETs) fabricated using semiconducting SWNTs show high performance in terms of the mobility. However, carriers in pristine SWNTs are mostly holes and, therefore, SWNTs -FETs usually show p-type properties. As for SWNTs, chemical carrier doping has been reported so far for controlling carrier concentration like graphite intercalations. Two major techniques in SWNTs are generally possible; one is endohedral doping and the other is the exohedral chemical modifications. It has been exemplified that doping with alkali metals can introduce electron carriers into SWNTs. Furthermore, the electrical transport properties of SWNTs were reported to be controlled by the endohedral insertion of organic molecules inside the SWNTs. A similar carrier doping could exohedrally be possible when the SWNTs surface is chemically modified. With such chemical modifications, the charge transfer from the substituent groups to SWNTs will be expected and this could modify the electronic states of SWNTs. We reported the FET properties of individual SWNTs exohedrally modified by Si-containing organic moieties, and demonstrated that p-type nanotubes can be converted to n-type ones. However, because of ununiformity of the surface-chemical modifications of SWNTs, the true effects of the exohedral modifications on FET properties were extremely difficult to be evaluated. In this meeting, we will present comparison of the FET properties of the exohedrally silylated SWNTs between separated individual and spread-sheet samples. For evaluating the FET properties, the chemically modified SWNTs have been dispersed on a FET substrate, and the measurements have been carried out at ambient temperature using a conventional method for a separated SWNTs and a spread-sheet SWNTs film. As a reference, the experiments were also made in the same manner on chemically non-modified CNTs. From the experimental results, it will be demonstrated that an n-type property can be enhanced by the exohedral modifications both in the case of the spread-sheet samples and in the case of the individual ones. We will discuss the effects of surface silylation on the electronic states of these SWNTs.

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